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| 型号： | DMN65D8LFB-7B |
| 厂商： | Diodes Inc |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSF N CH 60V 260MA X1-DFN1006-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 260mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 3 欧姆 @ 115mA，10V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 25pF @ 25V |
| 功率 - 最大： | 430mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | 3-X1DFN1006 |
| 包装： | 标准包装 |
| 其它名称： | DMN65D8LFB-7BDIDKR |
DMN65D8LFB
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET
Product Summary
Features and Benefits
V (BR)DSS
60V
R DS(ON)
3.0 ? @ V GS = 10V
4.0 ? @ V GS = 5V
I D
T A = 25°C
400mA
330mA
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N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
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ESD Protected Gate, 1.2kV HBM
Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 1 and 2)
Description and Applications
These N-Channel enhancement mode field effect transistors are
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Qualified to AEC-Q101 Standards for High Reliability
produced using DIODES proprietary, high density, uses advanced
trench technology.These products have been designed to minimize
Mechanical Data
on-state resistance while provide rugged, reliable, and fast switching
performance.These products are particularly suited for low voltage,
low current applications such as small
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Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
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Load switching
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Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
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Weight: 0.001 grams (approximate)
Drain
X1-DFN1006-3
Body
Diode
Gate
Gate
Protection
Diode
Source
D
S
G
ESD PROTECTED TO 1.2kV
Bottom View
Equivalent Circuit
Top View
Pin Configuration
Ordering Information (Note 3)
Notes:
Part Number
DMN65D8LFB-7
DMN65D8LFB-7B
1. No purposefully added lead. Halogen and Antimony Free.
Case
X1-DFN1006-3
X1-DFN1006-3
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
DMN65D8LFB-7
DMN65D8LFB-7B
ate Code Key
X1
Top View
Dot Denotes Drain Side
X1
Top View
Bar Denotes Gate and Source Side
X1 = Product Type Marking Code
Year
Code
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN65D8LFB
Document number: DS35449 Rev. 2 - 2
1 of 5
www.diodes.com
November 2011
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN65D8LW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN65D8LW-7 | 功能描述:MOSFET MOSFET BVDSS: 61V-10 100V SOT323 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN66D0LDW | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN66D0LDW-7 | 功能描述:MOSFET 250mW 60Vdss RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN66D0LT | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
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