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参数资料
| 型号： | DMN62D0SFD-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 540MA 3-DFN |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 540mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 0.87nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 30.2pF @ 25V |
| 功率 - 最大： | 430mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-UDFN |
| 供应商设备封装： | 3-X1DFN1212 |
| 包装： | 标准包装 |
| 其它名称： | DMN62D0SFD-7DIDKR |
DMN62D0SFD
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
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Low On-Resistance
V (BR)DSS
60V
R DS(ON)
2 ? @ V GS = 10V
3 ? @ V GS = 5V
I D
T A = 25°C
540mA
430mA
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Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
ESD Protected Gate to 2kV
Lead Free/RoHS Compliant (Note 1)
Green Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
This new generation MOSFET has been designed to minimize the
on-state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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Case: X1-DFN1212-3
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Solderable per MIL-STD-202, Method 208
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DC-DC Converters
Power management functions
Battery Operated Systems and Solid-State Relays
Load switch
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Terminals: Finish – NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.005 grams (approximate)
Drain
Gate
Body
Diode
D
S
Gate
Protection
Diode
Source
G
ESD PROTECTED TO 2kV
Top View
Bottom View
Equivalent Circuit
Top view
Pin-out
Ordering Information (Note 3)
Notes:
Part Number
DMN62D0SFD -7
1. No purposefully added lead.
Case
X1-DFN1212-3
Packaging
3000/Tape & Reel
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
Date Code Key
K62
YM
K62 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Year
Code
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMN62D0SFD
Document number: DS35473 Rev. 3 - 2
1 of 6
www.diodes.com
January 2012
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
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| DMN62D1SFB-7B | 功能描述:MOSFET MOSFET BVDSS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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| DMN63D8LDW-13 | 制造商:Diodes Incorporated 功能描述:MOSF N CH DL 30V 220MA SOT363 |
| DMN63D8LDW-7 | 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 41V-60V SOT363 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET N CH DL 30V 220MA SOT363 |
| DMN63D8LV-7 | 功能描述:MOSFET Dual N-Ch Enh Mode 30V 4.2Ohm 200mA RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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