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| 型号： | DMN62D0SFD-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 540MA 3-DFN |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 540mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 欧姆 @ 500mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 0.87nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 30.2pF @ 25V |
| 功率 - 最大： | 430mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-UDFN |
| 供应商设备封装： | 3-X1DFN1212 |
| 包装： | 标准包装 |
| 其它名称： | DMN62D0SFD-7DIDKR |
DMN62D0SFD
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
60
±20
Units
V
V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 5) V GS = 5V
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
Maximum Body Diode Forward Current (Note 5)
Steady
State
t<10s
Steady
State
t<10s
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
I D
I DM
I S
540
430
630
500
430
340
510
410
1.0
1.0
mA
mA
mA
mA
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Total Power Dissipation (Note 4)
Characteristic
Symbol
P D
Value
0.43
Units
W
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
R θ JA
P D
R θ JA
R θ JC
T J, T STG
260
182
0.89
140
98
112
-55 to +150
°C/W
°C/W
W
°C/W
°C/W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
60
-
-
-
-
-
-
100
10
V
nA
μ A
V GS = 0V, I D = 10 μ A
V DS = 60V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1.0
-
-
-
-
1.6
-
-
130
0.8
2.5
2
3
-
1.2
V
Ω
mS
V
V DS = 10V, I D = 1mA
V GS = 10V, I D = 500mA
V GS = 5V, I D = 50mA
V DS = 3V, I D = 30mA
V GS = 0V, I S = 300mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = 4.5V)
Total Gate Charge (V GS = 10.0V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
-
30.2
4.4
2.8
131
0.39
0.87
0.14
0.09
3.95
3.81
16.0
9.04
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
V DS = 25V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V DS = 10V, I D = 1A
V DS = 30V, I D = 200mA
V GS = 10V, R G = 25 Ω
Notes:
4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMN62D0SFD
Document number: DS35473 Rev. 3 - 2
2 of 6
www.diodes.com
January 2012
? Diodes Incorporated
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