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| 型号： | DMN62D0LFB-7B |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 100MA 3-DFN |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 100mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 欧姆 @ 100mA，4V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 0.45nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 32pF @ 25V |
| 功率 - 最大： | 470mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-UFDFN |
| 供应商设备封装： | 3-X1DFN1006 |
| 包装： | 标准包装 |
| 其它名称： | DMN62D0LFB-7BDIDKR |
DMN62D0LFB
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
60
±20
Unit
V
V
Continuous Drain Current (Note 4) V GS = 4.0V
Pulsed Drain Current (Note 5)
Steady
State
T A = 25°C
T A = 70°C
I D
I DM
100
75
200
mA
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 4)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Max
0.47
258
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @ T A = 25°C unless otherwise stated
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
60
-
-
-
-
-
-
-
-
-
-
1.0
±100
±500
±2.0
V
μ A
nA
nA
μ A
V GS = 0V, I D = 250 μ A
V DS = 60V, V GS = 0V
V GS = ±5V, V DS = 0V
V GS = ±10V, V DS = 0V
V GS = ±15V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
0.6
-
1.0
V
V DS = V GS , I D = 250 μ A
-
1.3
2
V GS = 4V, I D = 100mA
Static Drain-Source On-Resistance
R DS (ON)
-
-
1.5
1.9
2.5
3
Ω
V GS = 2.5V, I D = 50mA
V GS = 1.8V, I D = 50mA
-
2.6
-
V GS = 1.5V, I D = 10mA
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
-
-
0.8
0.9
-
1.3
S
V
V DS = 10V, I D = 200mA
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
32
4.4
2.9
126
0.45
0.08
0.08
3.4
3.4
26.4
16.3
-
-
-
-
-
-
-
-
-
-
-
pF
Ω
nC
ns
ns
ns
ns
V DS = 25V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 4.5V, V DS = 10V,
I D = 250mA
V GS = 10V, V DS = 30V,
R L = 150 ? , R G = 25 ? ,
I D = 200mA
Notes:
4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
5. Repetitive rating, pulse width limited by junction temperature.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMN62D0LFB
Document number: DS35409 Rev. 2 - 2
2 of 6
www.diodes.com
October 2011
? Diodes Incorporated
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