- 您现在的位置：买卖IC网 > Datasheet目录407 > DMN6040SVT-7 (Diodes Inc)MOSFET N CH 60V 5A TSOT26 Datasheet资料下载
参数资料
| 型号： | DMN6040SVT-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 60V 5A TSOT26 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 44 毫欧 @ 4.3A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1287pF @ 25V |
| 功率 - 最大： | 1.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 26-TSOT |
| 包装： | 标准包装 |
| 其它名称： | DMN6040SVT-7DIDKR |
DMN6040SVT
1
0.1
0.01
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
R θ JA(t) = r (t) * R θ JA
R θ JA = 72 ° C/W
Duty Cycle, D = t1/t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01 0.1 1
10
100
1,000
t1, PULSE DURATION TIME (sec)
Fig. 3 Transient Thermal Resistance
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
60
?
?
?
?
?
?
100
± 100
V
nA
nA
V GS = 0V, I D = 250 μ A
V DS = 60V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1
?
?
?
?
?
30
35
4.5
0.7
3
44
60
?
1.2
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 4.3A
V GS = 4.5V, I D = 4A
V DS = 10V, I D = 4.3A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = 10V)
Total Gate Charge (V GS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
C iss
C oss
C rss
R G
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
t rr
Q rr
?
?
?
?
?
?
?
?
?
?
?
?
?
?
1287
57
44
1.2
22.4
10.4
4.9
3.0
6.6
8.1
20.1
4.0
18
11.9
?
?
?
?
?
?
?
?
?
?
?
?
?
?
pF
Ω
nC
nS
nS
nC
V DS = 25V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V DS = 30V, I D = 4.3A
V GS = 10V, V DD = 30V, R G = 6 Ω ,
I D = 4.3A
I S = 4.3A, dI/dt = 100A/ μ s
I S = 4.3A, dI/dt = 100A/ μ s
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. I AR and E AR rating are based on low frequency and duty cycles to keep T J = 25°C
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN6040SVT
Document number: DS35562 Rev. 10 - 2
3 of 7
www.diodes.com
March 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN6066SSD-13 | MOSFET 2N-CH 60V 3.3A SO8 |
| DMN6066SSS-13 | MOSFET N-CH 60V 3.7A SO8 |
| DMN6068LK3-13 | MOSFET N-CH 60V 6A DPAK |
| DMN6068SE-13 | MOSFET N-CH 60V 4.1A SOT223 |
| DMN62D0LFB-7B | MOSFET N-CH 60V 100MA 3-DFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN6066SSD | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN6066SSD-13 | 功能描述:MOSFET MOSFET,N-CHANNEL 60V, 3.6A/- 4.4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN6066SSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN6066SSS-13 | 功能描述:MOSFET MOSFET,N-CHANNEL 60V, 4.1A/- 5.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN6068LK3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
发布紧急采购，3分钟左右您将得到回复。