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参数资料
| 型号： | DMN6068LK3-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 6A DPAK |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 68 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 502pF @ 30V |
| 功率 - 最大： | 2.12W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN6068LK3-13DIDKR |
DMN6068LK3
Product Summary
Green
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
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100% Unclamped Inductive Switch (UIS) test in production
Low on-resistance
Fast switching speed
V (BR)DSS
R DS(on)
68m ? @ V GS = 10V
I D
T A = +25 ° C
8.5A
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Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
60V
100m ? @ V GS = 4.5V
7.0A
Mechanical Data
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Case: TO252
Description
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
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Motor Control
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Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0 (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (approximate)
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Transformer Driving Switch
DC-DC Converters
TO252-3L
D
D
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Power Management Functions
Uninterrupted Power Supply
G
G
D
S
S
Ordering Information
(Note 4)
TOP VIEW
PIN OUT -TOP VIEW
Equivalent Circuit
Product
DMN6068LK3-13
Marking
N6068L
Reel size (inches)
13
Tape width (mm)
16
Quantity per reel
2,500
Note:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
YYWW
N6068L
= Manufacturer’s Marking
N6068L = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
DMN6068LK3
Document Number DS32057 Rev 4 - 2
1 of 8
www.diodes.com
May 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN6068SE-13 | MOSFET N-CH 60V 4.1A SOT223 |
| DMN62D0LFB-7B | MOSFET N-CH 60V 100MA 3-DFN |
| DMN62D0SFD-7 | MOSFET N-CH 60V 540MA 3-DFN |
| DMN65D8LDW-7 | MOSF N CH DUAL 60V 180MA SOT363 |
| DMN65D8LFB-7B | MOSF N CH 60V 260MA X1-DFN1006-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN6068SE | 制造商:Diodes Incorporated 功能描述:MOSFET N CH DIOD 60V 4.1A SOT223 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, DIOD, 60V, 4.1A, SOT223 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, DIOD, 60V, 4.1A, SOT223, Transistor Polarity:N Channel, Continuous |
| DMN6068SE_11 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN6068SE-13 | 功能描述:MOSFET ENHANCE MODE MOSFET 60V N-CHAN RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN62D0LFB | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN62D0LFB-7 | 功能描述:MOSFET MOSFET BVDSS: 41V-60 X2-DFN1006-3 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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