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| 型号： | DMN6068LK3-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 6A DPAK |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 68 毫欧 @ 12A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 502pF @ 30V |
| 功率 - 最大： | 2.12W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | TO-252-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN6068LK3-13DIDKR |
DMN6068LK3
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Drain-Source voltage
Characteristic
Symbol
V DSS
Value
60
Unit
V
Gate-Source voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
(Note 5)
(Note 11)
(Note 11)
V GS
E AS
I AS
± 20
37.5
5.0
V
mJ
A
(Note 7)
8.5
Continuous Drain current
V GS = 10V
T A = 70 ° C (Note 7)
I D
6.8
A
(Note 6)
6.0
Pulsed Drain current
V GS = 10V
(Note 8)
I DM
22.2
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 7)
(Note 8)
I S
I SM
10.2
22.2
A
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
(Note 6)
Symbol
Value
4.12
33
Unit
Power dissipation
Linear derating factor
(Note 7)
P D
8.49
67.9
W
mW/ ° C
(Note 9)
(Note 6)
2.12
16.9
30.3
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 7)
(Note 9)
(Note 10)
R θ JA
R θ JL
T J , T STG
14.7
59.0
3.09
-55 to +150
° C/W
° C
Notes:
5. AEC-Q101 V GS maximum is ±16V.
6. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note 2, except the device is measured at t ≤ 10 sec.
8. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 μs. The pulse current is limited by the maximum junction temperature.
9. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
10. Thermal resistance from junction to solder-point (at the end of the drain lead).
11. UIS in production with L = 3.0mH, I AS = 5.0A, R G = 25? , V DD = 50V, starting T J = 25°C
DMN6068LK3
Document Number DS32057 Rev 4 - 2
2 of 8
www.diodes.com
May 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN6068SE-13 | MOSFET N-CH 60V 4.1A SOT223 |
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| DMN62D0SFD-7 | MOSFET N-CH 60V 540MA 3-DFN |
| DMN65D8LDW-7 | MOSF N CH DUAL 60V 180MA SOT363 |
| DMN65D8LFB-7B | MOSF N CH 60V 260MA X1-DFN1006-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN6068SE | 制造商:Diodes Incorporated 功能描述:MOSFET N CH DIOD 60V 4.1A SOT223 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, DIOD, 60V, 4.1A, SOT223 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, DIOD, 60V, 4.1A, SOT223, Transistor Polarity:N Channel, Continuous |
| DMN6068SE_11 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN6068SE-13 | 功能描述:MOSFET ENHANCE MODE MOSFET 60V N-CHAN RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN62D0LFB | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN62D0LFB-7 | 功能描述:MOSFET MOSFET BVDSS: 41V-60 X2-DFN1006-3 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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