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| 型号： | DMN6040SSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N CH 60V 5A SO-8 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 4.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22.4nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1287pF @ 25V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SO |
| 包装： | 标准包装 |
| 其它名称： | DMN6040SSD-13DIDKR |
DMN6040SSD
60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
60V
R DS(on) max
40m Ω @ V GS = 10V
55m Ω @ V GS = 4.5V
I D
T A = 25°C
5.0A
4.4A
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Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
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DC-DC Converters
Power management functions
Backlighting
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Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
Top View
S1
G1
S2
G2
Top View
Pin Configuration
D1
D1
D2
D2
G1
D1
S1
G2
Equivalent Circuit
D2
S2
Ordering Information (Note 4)
Part Number
DMN6040SSD-13
Case
SO-8
Packaging
2,500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Top View
8
5
Logo
N6040SD
Part no.
YY WW
Xth week: 01 ~ 53
Year: “11 ” = 2011
1
4
DMN6040SSD
Document number: DS35673 Rev. 3 - 2
1 of 6
www.diodes.com
May 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN6040SSS-13 | MOSFET N CH 60V 5.5A SO-8 |
| DMN6040SVT-7 | MOSFET N CH 60V 5A TSOT26 |
| DMN6066SSD-13 | MOSFET 2N-CH 60V 3.3A SO8 |
| DMN6066SSS-13 | MOSFET N-CH 60V 3.7A SO8 |
| DMN6068LK3-13 | MOSFET N-CH 60V 6A DPAK |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN6040SSS-13 | 功能描述:MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN6040SVT-7 | 功能描述:MOSFET 60V N-Ch 44mOhm 10V VGS 5.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN6066SSD | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET |
| DMN6066SSD-13 | 功能描述:MOSFET MOSFET,N-CHANNEL 60V, 3.6A/- 4.4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN6066SSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:60V N-CHANNEL ENHANCEMENT MODE MOSFET |
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