- 您现在的位置：买卖IC网 > Datasheet目录407 > DMN601DMK-7 (Diodes Inc)MOSFET N-CH DUAL 60V 225MW SOT26 Datasheet资料下载
参数资料
| 型号： | DMN601DMK-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 60V 225MW SOT26 |
| 产品变化通告： | Copper Bond Wire Change 3/May/2011 |
| 产品目录绘图： | SOT-26 Package Top SOT-26 Package Side 1 SOT-26 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 305mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.4 欧姆 @ 200mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 225mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 |
| 供应商设备封装： | SOT-26 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN601DMKDIDKR |
DMN601DMK
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
?
Low On-Resistance
V (BR)DSS
60V
R DS(ON) max
2.4 ? @ V GS = 10V
4.0 ? @ V GS = 4V
I D max
T A = 25°C
510mA
390mA
?
?
?
?
?
?
?
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Up To 2kV
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
?
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the
on-state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
?
?
?
Case: SOT26
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
?
?
?
DC-DC Converters
Power management functions
Analog Switch
?
?
?
Terminal Connections: See Diagram
Terminals: Finish ? Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (approximate)
Drain
SOT26
D 2
G 1
S 1
Body
Diode
Gate
Gate
Protection
Diode
Source
S 2
G 2
D 1
ESD PROTECTED TO 2kV
Top View
Equivalent Circuit
Per Element
Top View
Internal Schematic
Ordering Information (Note 3)
Notes:
Part Number
DMN601DMK-7
1. No purposefully added lead
Case
SOT26
Packaging
3000/Tape & Reel
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
K7K YM
K7K = Marking Code
YM = Date Code Marking
Y = Year (ex: S = 2005)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2005
S
Jan
1
2006
T
Feb
2
2007
U
Mar
3
2008
V
Apr
4
2009
W
May
5
2010
X
Jun
6
2011
Y
Jul
7
2012
Z
2013
A
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
DMN601DMK
Document number: DS30657 Rev. 5 - 2
1 of 5
www.diodes.com
November 2011
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN601DWK-7 | MOSFET N-CH DL 60V 200MW SOT-363 |
| DMN601K-7 | MOSFET N-CH 60V 300MA SOT23-3 |
| DMN601TK-7 | MOSFET N-CH 60V 300MA SOT-523 |
| DMN601VK-7 | MOSFET N-CH DL 60V 250MW SOT-563 |
| DMN601WK-7 | MOSFET N-CH 60V 300MA SC70-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN601DWK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN601DWK_07 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN601DWK-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN601K | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN601K_08 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。