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| 型号： | DMN601DMK-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 60V 225MW SOT26 |
| 产品变化通告： | Copper Bond Wire Change 3/May/2011 |
| 产品目录绘图： | SOT-26 Package Top SOT-26 Package Side 1 SOT-26 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 305mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.4 欧姆 @ 200mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 输入电容 (Ciss) @ Vds： | 50pF @ 25V |
| 功率 - 最大： | 225mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 |
| 供应商设备封装： | SOT-26 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMN601DMKDIDKR |
DMN601DMK
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
60
±20
Units
V
V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 5) V GS = 4V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
Steady
State
t<10s
Steady
State
t<10s
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
I D
I DM
I S
510
400
580
470
390
300
440
340
850
1.2
mA
mA
mA
mA
mA
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Total Power Dissipation (Note 4)
Characteristic
Symbol
P D
Value
0.7
Units
W
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady state
t<10s
Steady state
t<10s
R θ JA
P D
R θ JA
R θ JC
T J, T STG
157
121
0.98
113
88
26
-55 to +150
°C/W
W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
60
?
?
?
?
?
?
1
± 10
V
μ A
μ A
V GS = 0V, I D = 10 μ A
V DS = 60V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1.0
?
100
0.5
1.6
?
?
?
?
2.5
2.4
4.0
?
1.4
V
Ω
ms
V
V DS = 10V, I D = 1mA
V GS = 10V, I D = 200mA
V GS = 4V, I D = 200mA
V DS =10V, I D = 200mA
V GS = 0V, I S = 115mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
?
?
?
?
30
5
3
133
304
84
203
3.9
3.4
15.7
9.9
50
25
5.0
?
?
?
?
?
?
?
?
pF
pF
pF
?
nC
ns
V DS = 25V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = 4.5V, V DS = 10V,
I D = 250mA
V DS = 30V, I D = 0.2A,
V GS = 10V, R G = 25 ? , R L = 150 ?
Notes:
4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design. Not subject to production testing
DMN601DMK
Document number: DS30657 Rev. 5 - 2
2 of 5
www.diodes.com
November 2011
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMN601DWK-7 | MOSFET N-CH DL 60V 200MW SOT-363 |
| DMN601K-7 | MOSFET N-CH 60V 300MA SOT23-3 |
| DMN601TK-7 | MOSFET N-CH 60V 300MA SOT-523 |
| DMN601VK-7 | MOSFET N-CH DL 60V 250MW SOT-563 |
| DMN601WK-7 | MOSFET N-CH 60V 300MA SC70-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMN601DWK | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN601DWK_07 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN601DWK-7 | 功能描述:MOSFET Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMN601K | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMN601K_08 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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