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| 型号： | DMP1096UCB4-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 2.6A 4-UFCSP |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 102 毫欧 @ 500mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.7nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 251pF @ 6V |
| 功率 - 最大： | 820mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 4-UFBGA，CSPBGA |
| 供应商设备封装： | WL-CSP1010H6-4 |
| 包装： | 标准包装 |
| 其它名称： | DMP1096UCB4-7DIDKR |
DMP1096UCB4
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-12
-5
Unit
V
V
Continuous Drain Current (Note 5) V GS = -4.5V
Continuous Drain Current (Note 5) V GS = -2.5V
Pulsed Drain Current (Note 6)
Steady
State
Steady
State
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I DM
-2.6
-2.1
-2.4
-1.9
-10
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T A = +25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
0.82
150
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = +25°C
Gate-Source Leakage
BV DSS
BV GSS
I DSS
I GSS
-12
-6.0
-
-
-
-
-
-
-
-
-1
-500
V
V
μ A
nA
V GS = 0V, I D = -250 μ A
V DS = 0V, I G = -250 μ A
V DS = -9.6V, V GS = 0V
V GS = -5V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
-0.4
-0.6
-1.0
V
V DS = V GS , I D = -250 μ A
-
85
102
V GS = -4.5V, I D = -500mA
Static Drain-Source On-Resistance
R DS (ON)
-
97
116
m Ω
V GS = -2.5V, I D = -500mA
-
127
152
V GS = -1.5V, I D = -500mA
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
-
4
-0.6
-
-1.0
S
V
V DS = -6V, I D = -500mA
V GS = 0V, I S = -500mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Charge at Vth
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
Q g
Q gs
Q gd
Q g(th)
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
251
359
70
3.7
0.4
0.6
0.2
17.6
26.9
37.5
32.3
-
-
-
-
-
-
-
-
-
-
-
pF
nC
ns
V DS = -6V, V GS = 0V,
f = 1.0MHz
V GS = -4.5V, V DS = -6V,
I D = -500mA
V DS = -6V, V GS = -2.5V,
R G = 20 ? , I D = -500mA
Notes:
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMP1096UCB4
Document number: DS31954 Rev. 7 - 2
2 of 6
www.diodes.com
December 2012
? Diodes Incorporated
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