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| 型号： | DMP2004TK-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 430MA SOT-523 |
| 产品目录绘图： | SOT-523 Package Top SOT-523 Package Side 1 SOT-523 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 430mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 1.1 欧姆 @ 430mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 175pF @ 16V |
| 功率 - 最大： | 150mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-523 |
| 供应商设备封装： | SOT-523 |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMP2004TKDIDKR |
DMP2004TK
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±8
Units
V
V
Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Steady
State
T A = +25 ° C
T A = +85 ° C
I D
I DM
-430
-310
-750
mA
mA
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
150
833
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
?
?
?
?
?
?
-1.0
± 1.0
V
μ A
μ A
V GS = 0V, I D = -250 μ A
V DS = -20V, V GS = 0V
V GS = ± 4.5V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V GS(th)
R DS (ON)
-0.5
?
?
0.7
1.1
-1.0
1.1
1.6
V
Ω
V DS = V GS , I D = -250 μ A
V GS = -4.5V, I D = -430mA
V GS = -2.5V, I D = -300mA
1.7
2.4
V GS = -1.8V, I D = -150mA
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
|Y fs |
V SD
200
?
?
?
?
-1.4
ms
V
V DS =10V, I D = 0.2A
V GS = 0V, I S = -115mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
?
?
?
175
30
20
pF
pF
pF
V DS = -16V, V GS = 0V
f = 1.0MHz
Notes:
5. Device mounted on FR-4 PCB.
6. Pulse width ≤ 10 μ S, Duty Cycle ≤ 1%
7. Short duration pulse test used to minimize self-heating effect.
DMP2004TK
Document number: DS30932 Rev. 5 - 2
2 of 5
www.diodes.com
August 2012
? Diodes Incorporated
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