参数资料
型号: DMP2022LSS-13
厂商: Diodes Inc
文件页数: 1/5页
文件大小: 0K
描述: MOSFET P-CH 20V 10A 8SOIC
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 10A
开态Rds(最大)@ Id, Vgs @ 25° C: 13 毫欧 @ 10A,10V
Id 时的 Vgs(th)(最大): 1.1V @ 250µA
闸电荷(Qg) @ Vgs: 56.9nC @ 10V
输入电容 (Ciss) @ Vds: 2444pF @ 10V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 标准包装
其它名称: DMP2022LSS-13DIDKR
DMP2022LSS
SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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Low On-Resistance
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Case: SO-8
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13m ? @ V GS = -10V
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Case Material: Molded Plastic, “Green” Molding Compound.
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? 16m ? @ V GS = -4.5V
? 22m ? @ V GS = -2.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
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UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072g (approximate)
SO-8
TOP VIEW
S
S
S
G
TOP VIEW
Internal Schematic
D
D
D
D
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
± 12
Units
V
V
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
Steady
State
T A = 25°C
T A = 70°C
I D
I DM
-10
-8
-35
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
Device mounted on 2 oz. Copper pads on FR-4 PCB.
Symbol
P D
R θ JA
T J, T STG
Value
2.5
50
-55 to +150
Unit
W
°C/W
°C
2.
3.
4.
No purposefully added lead.
Pulse width ≤ 10 μ S, Duty Cycle ≤ 1%.
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMP2022LSS
Document number: DS31373 Rev. 5 - 2
1 of 5
www.diodes.com
June 2010
? Diodes Incorporated
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