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参数资料
| 型号： | DMP2039UFDE4-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSF P CH 25V 7.3A X2-DFN2020-6 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 26 毫欧 @ 6.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28.2nC @ 15V |
| 输入电容 (Ciss) @ Vds： | 2530pF @ 15V |
| 功率 - 最大： | 690mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-XDFN |
| 供应商设备封装： | * |
| 包装： | 标准包装 |
| 其它名称： | DMP2039UFDE4-7DIDKR |
DMP2039UFDE4
25V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
PCB footprint of 4mm
V (BR)DSS
-25V
R DS(on) max
26m Ω @ V GS = -4.5V
40m Ω @ V GS = -1.8V
I D
T A = 25°C
-7.3
-6.0
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Low R DS(ON) – ensures on state losses are minimized
0.4mm profile – ideal for low profile applications
2
Low Input Capacitance
ESD Protected Gate
Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
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"Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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Case: X2-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
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Load Switching
Battery Management Application
Power Management Functions
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Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.006 grams (approximate)
Drain
X2-DFN2020-6
Gate
Gate
Protection
Diode
Source
ESD PROTECTED
Bottom View
Top View
Bottom View
Equivalent Circuit
Internal Schematic
Ordering Information (Note 3)
Part Number
DMP2039UFDE4-7
Case
X2-DFN2020-6
Packaging
3,000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
PD = Product Type Marking Code
YM = Date Code Marking
PD
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Dot Denotes Pin 1
Date Code Key
Year
Code
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMP2039UFDE4
Document number: DS35675 Rev. 3 - 2
1 of 6
www.diodes.com
March 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
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| DMP2066LDM-7 | MOSFET P-CH 20V 4.6A SOT-26 |
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| DMP2066LSN-7 | MOSFET P-CH 20V 4.6A SC59-3 |
| DMP2066LSS-13 | MOSFET P-CH 20V 6.5A 8-SOIC |
| DMP2066UFDE-7 | MOSF P CH 20V 6.2A U-DFN2020-6E |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMP2039UFDE-7 | 功能描述:MOSFET MOSFET BVDSS: 25V-30 U-DFN2020-6 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP2066LDM | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMP2066LDM-7 | 功能描述:MOSFET P-channel 1.25W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP2066LSD | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMP2066LSD-13 | 功能描述:MOSFET 2xP-Channel 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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