- 您现在的位置：买卖IC网 > Datasheet目录407 > DMP2039UFDE4-7 (Diodes Inc)MOSF P CH 25V 7.3A X2-DFN2020-6 Datasheet资料下载
参数资料
| 型号： | DMP2039UFDE4-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSF P CH 25V 7.3A X2-DFN2020-6 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 26 毫欧 @ 6.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28.2nC @ 15V |
| 输入电容 (Ciss) @ Vds： | 2530pF @ 15V |
| 功率 - 最大： | 690mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-XDFN |
| 供应商设备封装： | * |
| 包装： | 标准包装 |
| 其它名称： | DMP2039UFDE4-7DIDKR |
DMP2039UFDE4
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-25
±8
Units
V
V
Continuous Drain Current (Note 5) V GS = -4.5V
Continuous Drain Current (Note 5) V GS = -1.8V
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
Continuous Source-Drain Diode Current
Steady
State
t<5s
Steady
State
t<5s
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
I D
I DM
I S
-7.3
-5.8
-9.2
-7.3
-6.0
-4.7
-7.6
-6.0
-60
-2.0
A
A
A
A
A
A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
T A = 25°C
T A = 70°C
Steady state
t<5s
T A = 25°C
T A = 70°C
Steady state
t<5s
Steady state
P D
R θ JA
P D
R θ JA
R θ JC
T J, T STG
0.69
0.44
182
113
2.4
1.5
52
33
9.1
-55 to +150
W
°C/W
W
°C/W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-25
?
?
?
?
?
?
-1
± 10
V
μA
μA
V GS = 0V, I D = -250 μ A
V DS = -25V, V GS = 0V
V GS = ± 8.0V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
-0.4
?
-1.0
V
V DS = V GS , I D = -250 μ A
?
19
26
V GS = -4.5V, I D = -6.4A
Static Drain-Source On-Resistance
R DS (ON)
?
?
24
29
33
40
m Ω
V GS = -2.5V, I D = -4.8A
V GS = -1.8V, I D = -2.5A
?
35
70
V GS = -1.5V, I D = -1.5A
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
|Y fs |
V SD
?
?
14
-0.7
?
-1.0
mS
V
V DS = -5V, I D = -4A
V GS = 0V, I S = -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
?
?
?
?
2530
203
177
9.1
28.2
48.7
3.2
5.0
15.1
23.5
137.6
?
?
?
?
?
?
?
?
?
?
?
pF
pF
pF
Ω
nC
nS
V DS = -15V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V DS = -15V, I D = -4.0A
V DD = -15V, V GS = -4.5V, R G = 1 ? ,
I D = -4.0A
Notes:
4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6. Short duration pulse test used to minimize self-heating effect
7. Guaranteed by design. Not subject to production testing.
DMP2039UFDE4
Document number: DS35675 Rev. 3 - 2
2 of 6
www.diodes.com
March 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMP2066LDM-7 | MOSFET P-CH 20V 4.6A SOT-26 |
| DMP2066LSD-13 | MOSFET P-CH DUAL 20V 5.8A 8-SOIC |
| DMP2066LSN-7 | MOSFET P-CH 20V 4.6A SC59-3 |
| DMP2066LSS-13 | MOSFET P-CH 20V 6.5A 8-SOIC |
| DMP2066UFDE-7 | MOSF P CH 20V 6.2A U-DFN2020-6E |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMP2039UFDE-7 | 功能描述:MOSFET MOSFET BVDSS: 25V-30 U-DFN2020-6 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP2066LDM | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMP2066LDM-7 | 功能描述:MOSFET P-channel 1.25W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP2066LSD | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMP2066LSD-13 | 功能描述:MOSFET 2xP-Channel 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。