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参数资料
| 型号： | DMP2066UFDE-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSF P CH 20V 6.2A U-DFN2020-6E |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 36 毫欧 @ 4.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 14.4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1537pF @ 10V |
| 功率 - 最大： | 660mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UDFN 裸露焊盘 |
| 供应商设备封装： | 6-DFN2020（2x2） |
| 包装： | 标准包装 |
| 其它名称： | DMP2066UFDE-7DIDKR |
DMP2066UFDE
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
PCB footprint of 4mm
V (BR)DSS
-20V
R DS(ON)
36m Ω @ V GS = -4.5V
56m Ω @ V GS = -2.5V
75m Ω @ V GS = -1.8V
Package
U-DFN2020-6
Type E
I D
T A = +25°C
-6.2A
-5.0A
-4.2A
?
?
?
?
?
?
?
0.6mm profile – ideal for low profile applications
2
Low Gate Threshold Voltage
Low On-Resistance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3) ?
Qualified to AEC-Q101 Standards for High Reliability
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
Mechanical Data
applications.
Applications
? General Purpose Interfacing Switch
? Power Management Functions
?
Analog Switch
Pin1
U-DFN2020-6
Type E
6 D
5 D
?
?
?
?
?
Case: U-DFN2020-6 Type E
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Weight: 0.0065 grams (approximate)
D 1
D 2
4 S
S
G 3
Bottom View
Ordering Information (Note 4)
Part Number
DMP2066UFDE-7
Bottom View
Internal Schematic
Case
U-DFN2020-6 Type E
Equivalent Circuit
Packaging
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
PC = Product Type Marking Code
PC
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Dot Denotes Pin 1
Date Code Key
Year
Code
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMP2066UFDE
Document number: DS35496 Rev. 5 - 2
1 of 6
www.diodes.com
July 2012
? Diodes Incorporated
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DMP2069UFY4 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMP2069UFY4-7 | 功能描述:MOSFET MOSFET P-CHAN. RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP2070UCB6-7 | 功能描述:MOSFET MOSFET BVDSS: 25V-30 U-WLB1015-6 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP2100U-7 | 制造商:Zetex / Diodes Inc 功能描述:Trans MOSFET P-CH 20V 4.3A T/R 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 25V-30V SOT23 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET P CH 20V 4.3A SOT23 制造商:Diodes Incorporated 功能描述:20V P-CH MOSFET |
| DMP2100UCB9-7 | 功能描述:MOSFET MOSFET BVDSS: 8V-24V U-WLB1515-9 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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