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参数资料
| 型号： | DMP2100UCB9-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P CH 20V 3A U-WLB1515-9 |
| 标准包装： | 1 |
| FET 型： | 2 P 沟道（双）共源 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 900mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 310pF @ 10V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 9-UFBGA，WLBGA |
| 供应商设备封装： | U-WLB1515-9（1.51x1.51） |
| 包装： | 标准包装 |
| 其它名称： | DMP2100UCB9-7DIDKR |
DMP2100UCB9
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
BV D1D2
-20V
R D1D2(ON)
100m ? @ V GS = -4.5V
I D1D2
T C = +25°C
-4.0 A
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Low Q g & Q gd
Dual PMOS in Common-Source Configuration
Small Footprint 1.5-mm × 1.5-mm
Gate ESD Protection to 3kV
Description
This new generation MOSFET has been designed to minimize the on-
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Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
state resistance (R D1D2(ON) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
Mechanical Data
applications.
Applications
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Battery Management
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Load Switch
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Battery Protection
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Case: U-WLB1515-9
Terminal Connections: See Diagram Below
Weight: 0.0018 grams (approximate)
G1
SS
D1
D2
D1
D1
ESD PROTECTED TO 3kV
G2
D2
D2
Top View
Ordering Information (Note 4)
Part Number
DMP2100UCB9-7
Case
U-WLB1515-9
Packaging
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
6W
YM
6W = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
DMP2100UCB9
Document number: DS35725 Rev. 3 - 2
1 of 6
www.diodes.com
July 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMP2104LP-7 | MOSFET P-CH 20V 1.5A 3-DFN |
| DMP2104V-7 | MOSFET P-CH 20V 860MA SOT-563 |
| DMP2123L-7 | MOSFET P-CH 20V 3A SOT23-3 |
| DMP2130L-7 | MOSFET P-CH 20V 3A SOT23-3 |
| DMP2130LDM-7 | MOSFET P-CH 20V 3.4A SOT-26 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMP2100UQ-7 | 制造商:Diodes Incorporated 功能描述: |
| DMP2104LP | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMP2104LP-7 | 功能描述:MOSFET P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP2104V | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMP2104V_0711 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
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