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参数资料
| 型号： | DMP2123L-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 3A SOT23-3 |
| 产品目录绘图： | SOT-23 Package Top SOT-23 Package Side 1 SOT-23 Package Side 2 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 72 毫欧 @ 3.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.25V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 443pF @ 16V |
| 功率 - 最大： | 1.4W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1577 (CN2011-ZH PDF) |
| 其它名称： | DMP2123LDIDKR |
DMP2123L
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
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Low R DS(ON)
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Case: SOT23
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72 m ? @V GS = -4.5V
108 m ? @V GS = -2.7V
123 m ? @V GS = -2.5V
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Case Material - Molded Plastic, “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
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Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram Below
Weight: 0.008 grams (approximate)
SOT23
Drain
D
Gate
G
S
TOP VIEW
Ordering Information (Note 4)
Part Number
DMP2123L-7
Source
Internal Schematic
Case
SOT-23
TOP VIEW
Packaging
3000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. ?
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
M1P
Chengdu A/T Site
Date Code Key
M1P
Shanghai A/T Site
M1P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Year
Code
2007
U
2008
V
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMP2123L
Document number: DS31440 Rev. 2 - 2
1 of 5
www.diodes.com
October 2013
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMP2130L-7 | MOSFET P-CH 20V 3A SOT23-3 |
| DMP2130LDM-7 | MOSFET P-CH 20V 3.4A SOT-26 |
| DMP2160U-7 | MOSFET P-CH 20V 3.2A SOT-23 |
| DMP2160UW-7 | MOSFET P-CH 20V 1.5A SOT-323 |
| DMP21D0UFB4-7B | MOSF P CH 20V 770MA DFN1006H4-3 |
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参数描述 |
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| DMP2130L | 制造商:TYSEMI 制造商全称:TY Semiconductor Co., Ltd 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET Low Input/Output Leakage |
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| DMP2130LDM | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMP2130LDM-7 | 功能描述:MOSFET P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP2160U | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
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