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| 型号： | DMP21D0UFB4-7B |
| 厂商： | Diodes Inc |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSF P CH 20V 770MA DFN1006H4-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 770mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 495 毫欧 @ 400mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.54nC @ 8V |
| 输入电容 (Ciss) @ Vds： | 80pF @ 10V |
| 功率 - 最大： | 430mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | 3-DFN1006H4（1.0x0.6） |
| 包装： | 标准包装 |
| 其它名称： | DMP21D0UFB4-7BDIDKR |
A Product Line of
Diodes Incorporated
DMP21D0UFB4
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Footprint of just 0.6mm – thirteen times smaller than SOT23
V (BR)DSS
-20V
R DS(on)
495m Ω @ V GS = -4.5V
690m Ω @ V GS = -2.5V
960m Ω @ V GS = -1.8V
I D @ T A = 25 ° C
-0.77A
-0.67A
-0.57A
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2
0.4mm profile – ideal for low profile applications
Low Gate Threshold Voltage
Fast Switching Speed
Totally Lead-Free & Fully RoHS compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
ESD Protected Gate 3KV
?
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R DS(on) ) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
? Case: X2-DFN1006-3
? Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
? Moisture Sensitivity: Level 1 per J-STD-020
?
Portable electronics
?
?
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.001 grams (approximate)
Drain
X2-DFN1006-3
D
S
G
Gate
Gate
Source
ESD PROTECTED TO 3kV
Bottom View
Top View
Internal Schematic
Protection
Diode
Equivalent Circuit
Ordering Information (Note 3)
Part Number
DMP21D0UFB4-7B
Marking
NO
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMP21D0UFB4-7B
NO
Top View
Bar Denotes Gate
and Source Side
NO = Product Type Marking Code
DMP21D0UFB4
D atasheet number: DS35279 Rev. 3 - 2
1 of 7
www.diodes.com
February 2012
? Diodes Incorporated
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PDF描述 |
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| DMP21D0UFD-7 | MOS P CH 20V 1.14A X1-DFN1212-3 |
| DMP21D0UT-7 | MOSFET P CH 20V 590A SOT523 |
| DMP21D5UFB4-7B | MOSF P CH 20V 700MA X2-DFN1006-3 |
| DMP2215L-7 | MOSFET P-CH 20V 2.7A SOT23-3 |
| DMP2225L-7 | MOSFET P-CH 20V 2.6A SOT23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMP21D0UFB-7 | 功能描述:MOSFET MOSFET P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP21D0UFB-7B | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMP21D0UFD | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMP21D0UFD-7 | 功能描述:MOSFET MOSFET BVDSS: 8V-24V X1-DFN1212-3 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP21D0UT-7 | 功能描述:MOSFET 20V P-Ch Enh FET PD 0.24W MIN RDSon RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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