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参数资料
| 型号： | DMP21D0UFB4-7B |
| 厂商： | Diodes Inc |
| 文件页数： | 3/7页 |
| 文件大小： | 0K |
| 描述： | MOSF P CH 20V 770MA DFN1006H4-3 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 770mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 495 毫欧 @ 400mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 700mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.54nC @ 8V |
| 输入电容 (Ciss) @ Vds： | 80pF @ 10V |
| 功率 - 最大： | 430mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | 3-DFN1006H4（1.0x0.6） |
| 包装： | 标准包装 |
| 其它名称： | DMP21D0UFB4-7BDIDKR |
A Product Line of
Diodes Incorporated
DMP21D0UFB4
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = 25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
20
-
-
-
-
-
-
-1
±10
V
μ A
μ A
V GS = 0V, I D = -250 μ A
V DS = -20V, V GS = 0V
V GS = ±8V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V GS(th)
-
-0.7
-
V
V DS = V GS , I D = -250 μ A
495
V GS = -4.5V, I D = -400mA
Static Drain-Source On-Resistance
R DS (ON)
-
-
690
m Ω
V GS = -2.5V, I D = -300mA
960
V GS = -1.8V, I D = -100mA
Forward Transfer Admittance
Diode Forward Voltage
|Y fs |
V SD
50
-
-
-
-
-1.2
mS
V
V DS = -3V, I D = -300mA
V GS = 0V, I S = -300mA
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
-
-
-
-
-
-
-
-
76.5
13.7
10.7
195
1.5
1.0
0.2
0.3
7.1
8.0
31.7
18.5
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
?
nC
nC
nC
nC
ns
ns
ns
ns
V DS = -10V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V GS = -8V, V DS = -15V, I D = -1A
V GS = -4.5V, V DS = -15V,
I D = -1A
V DS = -10V, -I D = 1A
V GS = -4.5V, R G = 6 ?
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6. Device mounted on minimum recommended pad layout test board, 10 μ s pulse duty cycle = 1%.
7. Short duration pulse test used to minimize self-heating effect.
Typical Characteristics
2.0
V GS = -4.5V
V GS = -4.0V
V GS = -3.0V
2.0
1.5
1.0
0.5
V GS = -2.5V
V GS = -2.0V
V GS = -1.8V
V GS = -1.5V
1.5
1.0
0.5
V DS = -5V
T A = 150°C
T A = 85°C
0
0
1
V GS = -1.2V
2 3 4
5
0
0
T A = 125°C
T A = 25°C
T A = -55°C
0.5 1.0 1.5 2.0 2.5
3.0
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 3 Typical Output Characteristic
-V GS , GATE-SOURCE VOLTAGE (V)
Fig. 4 Typical Transfer Characteristic
DMP21D0UFB4
D atasheet number: DS35279 Rev. 3 - 2
3 of 7
www.diodes.com
February 2012
? Diodes Incorporated
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| DMP21D0UFB-7 | 功能描述:MOSFET MOSFET P-CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP21D0UFB-7B | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:20V P-CHANNEL ENHANCEMENT MODE MOSFET |
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