- 您现在的位置：买卖IC网 > Datasheet目录408 > DMP2069UFY4-7 (Diodes Inc)MOSFET P-CH 20V 2.5A 3-DFN Datasheet资料下载
参数资料
| 型号： | DMP2069UFY4-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.5A 3-DFN |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 54 毫欧 @ 2.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9.1nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 214pF @ 10V |
| 功率 - 最大： | 530mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-XFDFN |
| 供应商设备封装： | DFN2015H4-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMP2069UFY4-7DIDKR |
DMP2069UFY4
P-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features
Mechanical Data
?
Low On-Resistance
?
Case: DFN2015H4-3
?
54m ? @ V GS = -4.5V
?
Case Material: Molded Plastic, “Green” Molding Compound.
?
?
?
?
?
?
?
? 69m ? @ V GS = -2.5V
? 90m ? @ V GS = -1.8V
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 1)
ESD Protected Up To 3kV
"Green" Device, Halogen and Antimony Free (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
?
?
?
?
?
?
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ? Matte Tin over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
S
D
G
ESD PROTECTED TO 3kV
TOP VIEW
BOTTOM VIEW
Internal Schematic
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±8
Units
V
V
Continuous Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Steady
State
T A = 25°C
T A = 70°C
I D
I DM
-2.5
-2.2
-12
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T A = 25°C
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
Symbol
P D
R θ JA
T J, T STG
Value
0.53
231
-55 to +150
Unit
W
°C/W
°C
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.
DMP2069UFY4
Document number: DS31949 Rev. 2 - 2
1 of 6
www.diodes.com
November 2009
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMP2070UCB6-7 | MOSFET P-CH 20V 2.5A U-WLB1510-6 |
| DMP2100UCB9-7 | MOSFET P CH 20V 3A U-WLB1515-9 |
| DMP2104LP-7 | MOSFET P-CH 20V 1.5A 3-DFN |
| DMP2104V-7 | MOSFET P-CH 20V 860MA SOT-563 |
| DMP2123L-7 | MOSFET P-CH 20V 3A SOT23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMP2070UCB6-7 | 功能描述:MOSFET MOSFET BVDSS: 25V-30 U-WLB1015-6 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP2100U-7 | 制造商:Zetex / Diodes Inc 功能描述:Trans MOSFET P-CH 20V 4.3A T/R 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 25V-30V SOT23 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET P CH 20V 4.3A SOT23 制造商:Diodes Incorporated 功能描述:20V P-CH MOSFET |
| DMP2100UCB9-7 | 功能描述:MOSFET MOSFET BVDSS: 8V-24V U-WLB1515-9 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP2100UQ-7 | 制造商:Diodes Incorporated 功能描述: |
| DMP2104LP | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
发布紧急采购，3分钟左右您将得到回复。