参数资料
型号: DMP2066LSN-7
厂商: Diodes Inc
文件页数: 1/5页
文件大小: 0K
描述: MOSFET P-CH 20V 4.6A SC59-3
产品目录绘图: SC-59 Package Top
SC-59 Package Side
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 4.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 40 毫欧 @ 4.6A,4.5V
Id 时的 Vgs(th)(最大): 1.2V @ 250µA
闸电荷(Qg) @ Vgs: 10.1nC @ 4.5V
输入电容 (Ciss) @ Vds: 820pF @ 15V
功率 - 最大: 1.25W
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SC-59-3
包装: 标准包装
产品目录页面: 1578 (CN2011-ZH PDF)
其它名称: DMP2066LSNDIDKR
DMP2066LSN
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
?
?
?
?
?
Low R DS(ON) :
? 40 m Ω @V GS = -4.5V
? 70 m Ω @V GS = -2.5V
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Note 4)
?
?
?
?
?
?
?
?
Case: SC-59
Case Material – Molded Plastic. UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See page 4
Weight: 0.014 grams (approximate)
SC-59
Drain
D
Gate
Source
G
S
TOP VIEW
Internal Schematic
Pin Configuration
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
± 12
Unit
V
V
Drain Current (Note 1) Continuous
Pulsed Drain Current (Note 2)
Body-Diode Continuous Current (Note 1)
T A = 25°C
T A = 70°C
I D
I DM
I S
-4.6
-3.7
-18
2.0
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1); Steady-State
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
1.25
100
-55 to +150
Unit
W
° C/W
° C
Notes:
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤ 10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMP2066LSN
Document number: DS31467 Rev. 4 - 2
1 of 5
www.diodes.com
August 2011
? Diodes Incorporated
相关PDF资料
PDF描述
DMP2066LSS-13 MOSFET P-CH 20V 6.5A 8-SOIC
DMP2066UFDE-7 MOSF P CH 20V 6.2A U-DFN2020-6E
DMP2069UFY4-7 MOSFET P-CH 20V 2.5A 3-DFN
DMP2070UCB6-7 MOSFET P-CH 20V 2.5A U-WLB1510-6
DMP2100UCB9-7 MOSFET P CH 20V 3A U-WLB1515-9
相关代理商/技术参数
参数描述
DMP2066LSS 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2066LSS-13 功能描述:MOSFET P-Channel 2.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP2066LVT-7 制造商:Diodes Incorporated 功能描述:MOSFET P-CH 20V TSOT26
DMP2066UFDE 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:25V P-CHANNEL ENHANCEMENT MODE MOSFET
DMP2066UFDE-7 功能描述:MOSFET MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube