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| 型号： | DMP2066LSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 20V 5.8A 8-SOIC |
| 产品目录绘图： | DMN Series Top DMN Series Side 1 DMN Series Side 2 |
| 标准包装： | 1 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 4.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10.1nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 820pF @ 15V |
| 功率 - 最大： | 2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1578 (CN2011-ZH PDF) |
| 其它名称： | DMP2066LSDDIDKR |
DMP2066LSD
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
V (BR)DSS
-20V
R DS(on) max
40m Ω @ V GS = -4.5V
70m Ω @ V GS = -2.5V
I D
T A = +25°C
-5.8A
-4.4A
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Dual P-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Description
This new generation MOSFET has been designed to minimize the
on-state resistance (R DS(ON) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
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Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
applications.
Mechanical Data
Applications
? Backlighting
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Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
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Power Management Functions
DC-DC Converters
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Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections Indicator: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208 e3
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Weight: 0.072 grams (approximate)
SO-8
S1
G1
D1
D1
D1
D2
TOP VIEW
Ordering Information
Part Number
DMP2066LSD-13
S2
G2
(Note 4)
TOP VIEW
Internal Schematic
D2
D2
Case
SO-8
G1
S1
P-Channel MOSFET
G2
S2
P-Channel MOSFET
Packaging
2500/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
= Manufacturer’s Marking
P2066LD = Product Type Marking Code
P2066LD
YY WW
P2066LD
YY WW
YYWW = Date Code Marking
YY or YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
1
4
1
4
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Chengdu A/T Site
Shanghai A/T Site
DMP2066LSD
Document number: DS31453 Rev. 4 - 2
1 of 5
www.diodes.com
January 2014
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMP2066LSN-7 | MOSFET P-CH 20V 4.6A SC59-3 |
| DMP2066LSS-13 | MOSFET P-CH 20V 6.5A 8-SOIC |
| DMP2066UFDE-7 | MOSF P CH 20V 6.2A U-DFN2020-6E |
| DMP2069UFY4-7 | MOSFET P-CH 20V 2.5A 3-DFN |
| DMP2070UCB6-7 | MOSFET P-CH 20V 2.5A U-WLB1510-6 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMP2066LSN | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMP2066LSN-7 | 功能描述:MOSFET P-channel 1.25W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP2066LSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SINGLE P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMP2066LSS-13 | 功能描述:MOSFET P-Channel 2.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP2066LVT-7 | 制造商:Diodes Incorporated 功能描述:MOSFET P-CH 20V TSOT26 |
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