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参数资料
| 型号： | DMP2022LSS-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 10A 8SOIC |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 13 毫欧 @ 10A，10V |
| Id 时的 Vgs(th)（最大）： | 1.1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 56.9nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2444pF @ 10V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 标准包装 |
| 其它名称： | DMP2022LSS-13DIDKR |
DMP2022LSS
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
?
?
?
?
?
?
-1
± 100
V
μ A
nA
V GS = 0V, I D = -250 μ A
V DS = -20V, V GS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(th)
-0.6
0.77
-1.1
V
V DS = V GS , I D = -250 μ A
?
8
13
V GS = -10V, I D = -10A
Static Drain-Source On-Resistance
R DS (ON)
?
11
16
m Ω
V GS = -4.5V, I D = -9A
?
17
22
V GS = -2.5V, I D = -8A
Forward Transconductance
Diode Forward Voltage (Note 5)
g fs
V SD
?
-0.5
28
0.68
?
-1.2
S
V
V DS = -10V, I D = -10A
V GS = 0V, I S = -3A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C iss
C oss
C rss
R G
?
?
?
?
2444
594
556
2.0
?
?
?
?
pF
pF
pF
Ω
V DS = -10V, V GS = 0V
f = 1.0MHz
V GS = 0V V DS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS (Note 6)
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
28.1
56.9
3.4
11.9
7.5
9.9
108.0
76.5
?
?
?
15
20
216
153
nC
ns
V DS = -10V, V GS = -4.5V, I D = -10A
V DS = -10V, V GS = -10V, I D = -10A
V DS = -10V, V GS = -10V, I D = -10A
V DS = -10V, V GS = -10V, I D = -10A
V DD = -15V, I D = -1A, V GS = -10V,
R GEN = 6 ?
Notes:
5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to product testing.
30
25
20
15
10
5
30
25
20
15
10
5
V DS = -5V
Pulsed
0
0
0.5 1.0 1.5
2.0
0
0.5
1 1.5 2
2.5
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
-V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DMP2022LSS
Document number: DS31373 Rev. 5 - 2
2 of 5
www.diodes.com
June 2010
? Diodes Incorporated
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