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参数资料
| 型号： | DMP2035UVT-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P CH 20V 6A TSOT26 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 23.1nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2400pF @ 10V |
| 功率 - 最大： | 1.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 26-TSOT |
| 包装： | 标准包装 |
| 其它名称： | DMP2035UVT-7DIDKR |
DMP2035UVT
-20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V (BR)DSS
-20V
R DS(on) max
35m Ω @ V GS = -4.5V
45m Ω @ V GS = -2.5V
I D
T A = 25°C
-6.0A
-5.2A
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Low Input Capacitance
Low On-Resistance
Fast Switching Speed
ESD protected Up To 3KV
Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
"Green" Device (Note 2)
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Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This new generation MOSFET has been designed to minimize the on-
state resistance (R DS(on) ) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
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Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
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DC-DC Converters
Motor Control
Power management functions
Analog Switch
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Terminal Connections: See Diagram
Terminals: Finish – MatteTin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.0013 grams (approximate)
Drain
TSOT26
D
1
6
D
D
G
2
3
5
4
D
S
Gate
Gate
Protection
Diode
Source
ESD PROTECTED TO 3kV
Top View
Top View
Equivalent Circuit
Pin-Out
Ordering Information (Note 3)
Part Number
DMP2035UVT-7
DMP2035UVT-13
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
20P = Product Type Marking Code
20P
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2011
Y
2012
Z
2013
A
2014
B
2015
C
2016
D
2017
E
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
DMP2035UVT
Document number: DS35190 Rev. 5 - 2
1 of 6
www.diodes.com
March 2012
? Diodes Incorporated
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| DMP2039UFDE | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
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| DMP2039UFDE4-7 | 功能描述:MOSFET MOSFET BVDSS: 25V-30 X2-DFN2020-6 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP2039UFDE-7 | 功能描述:MOSFET MOSFET BVDSS: 25V-30 U-DFN2020-6 T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP2066LDM | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET |
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