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| 型号： | DMP2035UVT-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P CH 20V 6A TSOT26 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 35 毫欧 @ 4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 23.1nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2400pF @ 10V |
| 功率 - 最大： | 1.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 26-TSOT |
| 包装： | 标准包装 |
| 其它名称： | DMP2035UVT-7DIDKR |
DMP2035UVT
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-20
±12
Units
V
V
Continuous Drain Current (Note 5) V GS = -4.5V
Continuous Drain Current (Note 5) V GS = -2.5V
Steady
State
t<10s
Steady
State
t<10s
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 70 ° C
I D
I D
I D
I D
-6.0
-4.8
-7.2
-5.7
-5.2
-4.1
-6.2
-4.9
A
A
A
A
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10 μ s pulse, duty cycle = 1%)
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 4)
I S
I DM
Symbol
P D
-2.0
-24
Value
1.2
A
A
Units
W
Thermal Resistance, Junction to Ambient (Note 4)
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
Steady State
t<10s
Steady State
t<10s
Steady State
R θ JA
P D
R θ JA
R θ JC
T J, T STG
106
74
2.0
65
46
11.8
-55 to 150
°C/W
W
°C/W
°C
Electrical Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
?
?
?
?
?
?
-1
± 10
V
μA
μA
V GS = 0V, I D = -250 μ A
V DS = -20V, V GS = 0V
V GS = ± 8V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V GS(th)
-0.4
-0.7
-1.5
V
V DS = V GS , I D = -250 μ A
Gate Threshold Voltage Temperature Coefficient
V
GS(th) / T J
?
2.5
?
mV/°C
I D = -250 μ A , Referenced to 25°C
?
23
35
V GS = -4.5V, I D = -4.0A
Static Drain-Source On-Resistance
R DS (ON)
?
30
45
m Ω
V GS = -2.5V, I D = -4.0A
?
41
62
V GS = -1.8V, I D = -2.0A
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
|Y fs |
V SD
?
?
18
-0.7
?
-1.0
S
V
V DS = -5V, I D = -5.5A
V GS = 0V, I S = -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
C iss
C oss
C rss
R G
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
t rr
Q rr
?
?
?
?
?
?
?
?
?
?
?
?
?
1610
157
145
9.4
15.4
2.5
3.3
17
12
94
42
14
4
2400
210
200
14.1
23.1
?
?
33
19
150
64
25
8
pF
Ω
nC
ns
ns
nC
V DS = -10V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
V DS = -10V, V GS = -4.5V
I D = -4A
V GS = -4.5V, V DS = -10V, R G = 6 Ω ,
I D = -1A, R L = 10 Ω
I F =-4.5A, di/dt=100A/μS
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMP2035UVT
Document number: DS35190 Rev. 5 - 2
2 of 6
www.diodes.com
March 2012
? Diodes Incorporated
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