参数资料
型号: DMP2004WK-7
厂商: Diodes Inc
文件页数: 2/5页
文件大小: 0K
描述: MOSFET P-CH 20V 400MA SC70-3
产品变化通告: Copper Bond Wire Change 3/May/2011
标准包装: 3,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 400mA
开态Rds(最大)@ Id, Vgs @ 25° C: 900 毫欧 @ 430mA,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
输入电容 (Ciss) @ Vds: 175pF @ 16V
功率 - 最大: 250mW
安装类型: 表面贴装
封装/外壳: SC-70,SOT-323
供应商设备封装: SOT-323
包装: 带卷 (TR)
DMP2004WK
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Pulsed Drain Current
Characteristic
Symbol
V DSS
V GSS
I D
I DM
Value
-20
±8
-400
-1.4
Units
V
V
mA
A
Thermal Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P d
R ? JA
T j, T STG
Value
250
500
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-20
?
?
?
?
?
?
-1.0
? 1.0
V
μA
μA
V GS = 0V, I D = -250μA
V DS = -20V, V GS = 0V
V GS = ? 4.5V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 6)
V GS(th)
R DS(ON)
|Y fs |
V SD
-0.5
?
200
-0.5
?
0.7
1.1 ?
1.7
?
?
-1.0
0.9
1.4
2.0
?
-1.2
V
?
mS
V
V DS = V GS , I D = -250 ? A
V GS = -4.5V, I D = -430mA
V GS = -2.5V, I D = -300mA
V GS = -1.8V, I D = -150mA
V DS =10V, I D = -0.2A
V GS = 0V, I S = -115mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
?
?
?
?
?
?
175
30
20
pF
pF
pF
V DS = -16V, V GS = 0V
f = 1.0MHz
Notes:
5. Device mounted on FR-4 PCB.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
DMP2004WK
Document number: DS30931 Rev. 6 - 2
2 of 5
www.diodes.com
September 2013
? Diodes Incorporated
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