参数资料
型号: DMP2240UDM-7
厂商: Diodes Inc
文件页数: 2/5页
文件大小: 0K
描述: MOSFET P-CH DUAL 20V 2A SOT-26
产品变化通告: Copper Bond Wire Change 3/May/2011
产品目录绘图: SOT-26 Package Top
SOT-26 Package Side 1
SOT-26 Package Side 2
标准包装: 1
FET 型: 2 个 P 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2A
开态Rds(最大)@ Id, Vgs @ 25° C: 150 毫欧 @ 2A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
输入电容 (Ciss) @ Vds: 320pF @ 16V
功率 - 最大: 600mW
安装类型: 表面贴装
封装/外壳: SOT-23-6
供应商设备封装: SOT-26
包装: 标准包装
产品目录页面: 1578 (CN2011-ZH PDF)
其它名称: DMP2240UDMDIDKR
DMP2240UDM
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV DSS
-20
?
?
V
V GS = 0V, I D = -250 μ A
Zero Gate Voltage Drain Current
Gate-Source Leakage
T J = 25 ° C
T J = 125 ° C
I DSS
I GSS
?
?
?
?
-1.0
-5.0
± 100
μ A
nA
V DS = -20V, V GS = 0V
V GS = ± 12V, V DS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
V GS(th)
R DS (ON)
-0.45
?
?
92
134
-1.0
150
200
V
m Ω
V DS = V GS , I D = -250 μ A
V GS = -4.5V, I D = -2.0A
V GS = -2.5V, I D = -1.5A
180
240
V GS = -1.8V, I D = -0.5A
Forward Transconductance
Diode Forward Voltage (Note 4)
g FS
V SD
?
?
3.1
?
?
-0.9
S
V
V DS = -10V, I D = -810mA
V GS = 0V, I S = -0.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
320
80
60
11.51
12.09
55.34
27.54
?
?
?
?
?
?
?
pF
pF
pF
ns
ns
ns
ns
V DS = -16V, V GS = 0V
f = 1.0MHz
V DS = -10V, V GS = -4.5V
R G = 6 ? , R L = 10 ?
Notes:
4.
Short duration pulse test used to minimize self-heating effect.
V GS = -3.0V
V GS = -2.0V
V GS = -1.8V
V GS = -1.6V
V GS = -1.4V
V DS = -10V
T A = 125°C
T A = 25°C
V GS = -1.2V
DMP2240UDM
Document number: DS31197 Rev. 5 - 2
V GS = -1.0V
2 of 5
www.diodes.com
T A = -55°C
April 2010
? Diodes Incorporated
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