参数资料
型号: DMP3056LSD-13
厂商: Diodes Inc
文件页数: 3/5页
文件大小: 0K
描述: MOSFET P-CH 30V 6.9A 8-SOIC
产品变化通告: Bond Wire Change 11/Nov/2011
标准包装: 2,500
FET 型: 2 个 P 沟道(双)
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 6.9A
开态Rds(最大)@ Id, Vgs @ 25° C: 45 毫欧 @ 6A,10V
Id 时的 Vgs(th)(最大): 2.1V @ 250µA
闸电荷(Qg) @ Vgs: 13.7nC @ 10V
输入电容 (Ciss) @ Vds: 722pF @ 25V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 带卷 (TR)
DMP3056LSD
12
11
10
9
10
9
8
7
6
5
4
V GS = -10    V
V GS = -4.5     V
V GS = -3.0V
8
7
6
5
4
3
V DS = 5V
Pulsed
T A = 150°C
T A = 125°C
3
2
1
V GS = -1.5V
V GS = -1.0V
V GS = -2.5     V
2
1
T A = 85°C
T A = 25°C
T A = -55°C
0
0
0.5
1
1.5 2 2.5 3 3.5 4 4.5
5
0
1
1.5 2 2.5 3 3.5
4
0.1
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
0.05
0.04
-V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
0.03
V GS = -4.5V
I D = -5.0A
V GS = -4.5V
V GS = -10    V
0.02
0.01
V GS = -10V
I D = -6.0A
0.01
0.1
1 10
0
-50
-25 0 25 50 75 100 125 150
-I D , DRAIN-SOURCE CURRENT (A)
Fig. 3 On-Resistance vs. Drain Current & Gate Voltage
T A , AMBIENT TEMPERATURE (°C)
Fig. 4 Static Drain-Source On-Resistance
vs. Ambient Temperature
3
2.8
2.6
2.4
2.2
2
I D = -250μA
10,000
1,000
f = 1MHz
C iss
1.8
1.6
1.4
1.2
100
C oss
C rss
1
-50
-25 0 25 50 75 100 125 150
10
0
5
10
15
20
25
30
T A , AMBIENT TEMPERATURE (°C)
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Total Capacitance
DMP3056LSD
Document number: DS31420 Rev. 7 - 2
3 of 5
www.diodes.com
January 2014
? Diodes Incorporated
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