参数资料
型号: DMP3098LDM-7
厂商: Diodes Inc
文件页数: 1/4页
文件大小: 0K
描述: MOSFET P-CH 30V 4A SOT-26
产品变化通告: Bond Wire Change 11/Nov/2011
标准包装: 3,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 4A
开态Rds(最大)@ Id, Vgs @ 25° C: 65 毫欧 @ 4A,10V
Id 时的 Vgs(th)(最大): 2.1V @ 250µA
闸电荷(Qg) @ Vgs: 7.8nC @ 10V
输入电容 (Ciss) @ Vds: 336pF @ 25V
功率 - 最大: 1.25W
安装类型: 表面贴装
封装/外壳: SOT-23-6
供应商设备封装: SOT-26
包装: 带卷 (TR)

DMP3098LDM
P-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
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Low R DS(ON) :
? 65m Ω @V GS = -10V
? 115m Ω @V GS = -4.5V
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
"Green" Device (Note 4)
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Case: SOT-26
Case Material - Molded Plastic. UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See page 4
Weight: 0.008 grams (approximate)
SOT-26
D
D
D
D
S
G
TOP VIEW
TOP VIEW
Internal Schematic
Maximum Ratings
@T A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-30
± 20
Unit
V
V
Drain Current (Note 1) Continuous
Pulsed Drain Current (Note 2)
T A = 25°C
T A = 70°C
I D
I DM
-4.0
-3.0
-14
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1); Steady-State
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J , T STG
Value
1.25
100
-55 to +150
Unit
W
° C/W
° C
Notes:
1. Device mounted on 1"x1", FR-4 PC board on 0.1in. 2 pads on 2 oz. Copper pads and test pulse width t ≤ 10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMP3098LDM
Document number: DS31446 Rev. 3 - 2
1 of 4
www.diodes.com
October 2008
? Diodes Incorporated
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