参数资料
型号: DMP3098LDM-7
厂商: Diodes Inc
文件页数: 3/4页
文件大小: 0K
描述: MOSFET P-CH 30V 4A SOT-26
产品变化通告: Bond Wire Change 11/Nov/2011
标准包装: 3,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 4A
开态Rds(最大)@ Id, Vgs @ 25° C: 65 毫欧 @ 4A,10V
Id 时的 Vgs(th)(最大): 2.1V @ 250µA
闸电荷(Qg) @ Vgs: 7.8nC @ 10V
输入电容 (Ciss) @ Vds: 336pF @ 25V
功率 - 最大: 1.25W
安装类型: 表面贴装
封装/外壳: SOT-23-6
供应商设备封装: SOT-26
包装: 带卷 (TR)
DMP3098LDM
1
0.14
0.12
T A = 150°C
T A = 125°C
0.1
V GS = -4.5V
0.10
0.08
0.06
T A = 85°C
T A = 25°C
T A = -55°C
V GS = -10V
0.04
0.02
0.01
0
4 8 12 16
-I D , DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
20
0
0
2 4 6 8
-I D , DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
10
1.6
1,000
1.4
1.2
1.0
V GS = -10V
I D = -5.3A
V GS = -4.5V
I D = -4.2A
100
C iss
C oss
C rss
0.8
0.6
-50
-25 0 25 50 75 100 125 150
10
0
5 10 15 20 25
30
2.4
T A , AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
10
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Capacitance
2.0
I D = -250μA
8
T A = 25°C
6
1.6
4
1.2
2
0.8
-50
-25 0 25 50 75 100 125 150
0
0.4
0.6 0.8 1
1.2
T A , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-V SD , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
DMP3098LDM
Document number: DS31446 Rev. 3 - 2
3 of 4
www.diodes.com
October 2008
? Diodes Incorporated
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