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参数资料
| 型号： | DMP3098LDM-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 4/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 4A SOT-26 |
| 产品变化通告： | Bond Wire Change 11/Nov/2011 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 4A，10V |
| Id 时的 Vgs(th)（最大）： | 2.1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.8nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 336pF @ 25V |
| 功率 - 最大： | 1.25W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 |
| 供应商设备封装： | SOT-26 |
| 包装： | 带卷 (TR) |
DMP3098LDM
Ordering Information
(Note 7)
Part Number
DMP3098LDM-7
Case
SOT-26
Packaging
3000/Tape & Reel
Notes:
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
DMB = Product Type Marking Code
DMB
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
2008
V
2009
W
2010
X
2011
Y
2012
Z
2013
A
2014
B
2015
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
Package Outline Dimensions
A
SOT-26
Dim
Min
Max Typ
B C
A
B
C
0.35
1.50
2.70
0.50 0.38
1.70 1.60
3.00 2.80
D
?
?
0.95
H
H
J
2.90 3.10 3.00
0.013 0.10 0.05
K
M
K
L
1.00
0.35
1.30 1.10
0.55 0.40
J
D
L
M 0.10 0.20 0.15
α 0° 8° ?
All Dimensions in mm
Suggested Pad Layout
E
E
Dimensions Value (in mm)
Z
G
3.20
1.60
Z
G
C
X
Y
0.55
0.80
C
2.40
Y
E
0.95
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DMP3098LDM
Document number: DS31446 Rev. 3 - 2
4 of 4
www.diodes.com
October 2008
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMP3098LSD-13 | MOSFET P-CH 30V 4.4A 8-SOIC |
| DMP3098LSS-13 | MOSFET P-CH 30V 5.3A 8-SOIC |
| DMP3105LVT-7 | MOSFET P-CH 30V 3.1A TSOT26 |
| DMP3130L-7 | MOSFET P-CH 30V 3.5A SOT-23 |
| DMP3160L-7 | MOSFET P-CH 30V 2.7A SOT23-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMP3098LSD | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMP3098LSD-13 | 功能描述:MOSFET PMOS-DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP3098LSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DMP3098LSS-13 | 功能描述:MOSFET PMOS SINGLE P-CHANNL 30V 5.3A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP3099L-7 | 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 25V-30V SOT23 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET P-CH 30V SOT23 |
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