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| 型号： | DMP3098LSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 4.4A 8-SOIC |
| 产品变化通告： | Bond Wire Change 11/Nov/2011 |
| 标准包装： | 2,500 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 5A，10V |
| Id 时的 Vgs(th)（最大）： | 2.1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.8nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 336pF @ 25V |
| 功率 - 最大： | 1.8W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
DMP3098LSD
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-30
± 20
Units
V
V
Drain Current (Note 5)
Pulsed Drain Current (Note 6)
Steady
State
T A = +25°C
T A = +70°C
I D
I DM
-4.4
-3.3
-15
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
T J, T STG
Value
1.8
70
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-30
?
?
?
?
?
?
-1
± 100
V
μA
nA
V GS = 0V, I D = -250μA
V DS = -30V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 7)
V GS(th)
R DS(ON)
g fs
V SD
-1
?
?
?
-0.5
1.7
56
98
5.2
?
-2.1
65
115
?
-1.2
V
m Ω
S
V
V DS = V GS , I D = -250μA
V GS = -10V, I D = -5.0A
V GS = -4.5V, I D = -4.0A
V DS = -10V, I D = -5.0A
V GS = 0V, I S = -2.6A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C iss
C oss
C rss
R G
?
?
?
?
336
70
49
4.6
?
?
?
?
pF
pF
pF
Ω
V DS = -25V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
4.0
7.8
1.0
2.5
6.0
5.0
17.6
9.5
?
?
?
?
?
?
?
nC
ns
V DS = -15V, V GS = -4.5V,I D = -5.0A
V DS = -15V, V GS = -10V,I D = -5.0A
V DS = -15V, V GS = -4.5V,I D = -5.0A
V DS = -15V, V GS = -4.5V,I D = -5.0A
V DS = -15V, V GS = -10V,
I D = -1A, R G = 6.0 Ω
Notes:
5. Device mounted on 2 oz. 1” x 1” Copper pads on 2” x 2” FR-4 PCB.
6. Pulse width ≤ 10μS, Duty Cycle ≤ 1%.
7. Short duration pulse test used to minimize self-heating effect.
DMP3098LSD
Document number: DS31448 Rev. 4 - 2
2 of 5
www.diodes.com
January 2014
? Diodes Incorporated
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