参数资料
型号: DMP3098LSS-13
厂商: Diodes Inc
文件页数: 2/5页
文件大小: 0K
描述: MOSFET P-CH 30V 5.3A 8-SOIC
产品变化通告: Bond Wire Change 11/Nov/2011
标准包装: 2,500
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 5.3A
开态Rds(最大)@ Id, Vgs @ 25° C: 65 毫欧 @ 5.3A,10V
Id 时的 Vgs(th)(最大): 2.1V @ 250µA
闸电荷(Qg) @ Vgs: 7.8nC @ 10V
输入电容 (Ciss) @ Vds: 336pF @ 25V
功率 - 最大: 2.5W
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP
包装: 带卷 (TR)
DMP3098LSS
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
-30
?
?
?
?
?
?
-1
± 100
V
μ A
nA
V GS = 0V, I D = -250 μ A
V DS = -30V, V GS = 0V
V GS = ± 20V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 5)
V GS(th)
R DS (ON)
g fs
V SD
-1
?
?
?
-0.5
?
56
98
5.2
?
-2.1
65
115
?
-1.2
V
m Ω
S
V
V DS = V GS , I D = -250 μ A
V GS = -10V, I D = -5.3A
V GS = -4.5V, I D = -4.2A
V DS = -10V, I D = -5.3A
V GS = 0V, I S = -2A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
C iss
C oss
C rss
R G
?
?
?
?
336
70
49
4.6
?
?
?
?
pF
pF
pF
Ω
V DS = -25V, V GS = 0V
f = 1.0MHz
V DS = 0V, V GS = 0V
f = 1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q G
Q G
Q GS
Q GD
t d(on)
t r
t d(off)
t f
?
?
?
?
?
?
?
?
4.0
7.8
1.0
2.5
6.0
5.0
17.6
9.5
?
?
?
?
?
?
?
?
nC
nC
ns
V DS = -15V, V GS = -4.5V,
I D = -5.0A
V DS = -15V, V GS = -10V,
I D = -5.0A
V DS = -15V, V GS = -10V,
I D = -1A, R G = 6.0 Ω
Notes:
5. Short duration pulse test used to minimize self-heating effect.
20
20
V DS = -5V
16
V GS = -10V
16
T A = 150°C
T A = 125°C
T A = 25°C
12
8
4
0
V GS = -1.5V
V GS = -4.5V
V GS = -3.0V
V GS = -2.5V
12
8
4
0
T A = -55°C
0
1 2 3 4
5
1
2 3 4 5
6
-V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
-V GS , GATE SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristics
DMP3098LSS
Document number: DS31265 Rev. 4 - 2
2 of 5
www.diodes.com
September 2008
? Diodes Incorporated
相关PDF资料
PDF描述
DMP3105LVT-7 MOSFET P-CH 30V 3.1A TSOT26
DMP3130L-7 MOSFET P-CH 30V 3.5A SOT-23
DMP3160L-7 MOSFET P-CH 30V 2.7A SOT23-3
DMP31D0UFB4-7B MOSF P CH 30V 540MA X2-DFN1006-3
DMP4015SK3-13 MOSFET P-CH 40V 14A TO252 DPAK
相关代理商/技术参数
参数描述
DMP3099L-7 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 25V-30V SOT23 T&R 3K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET P-CH 30V SOT23
DMP3100L 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET
DMP3100L-7 功能描述:MOSFET SINGLE P-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP3105LVT-7 功能描述:MOSFET MOSFET BVDSS: 31V-40 TSOT23,3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMP3120L 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:P-CHANNEL ENHANCEMENT MODE MOSFET