- 您现在的位置：买卖IC网 > Datasheet目录408 > DMP4047LFDE-7 (Diodes Inc)MOSF P CH 40V 3.3A U-DFN2020-6E Datasheet资料下载
参数资料
| 型号： | DMP4047LFDE-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSF P CH 40V 3.3A U-DFN2020-6E |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 33 毫欧 @ 4.4A，10V |
| Id 时的 Vgs(th)（最大）： | 2.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 23.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1382pF @ 20V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-UDFN |
| 供应商设备封装： | * |
| 包装： | 标准包装 |
| 其它名称： | DMP4047LFDE-7DIDKR |
DMP4047LFDE
Maximum Ratings (@T A = +25°C, unless otherwise specified.)
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
-40
±20
Units
V
V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 6) V GS = 10V
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
Steady
State
t<5s
Steady
State
t<5s
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
T A = +25°C
T A = +70°C
I D
I D
I D
I D
I DM
I S
-3.3
-2.6
-5.3
-4.2
-6.0
-4.8
-9.5
-7.6
-40
3
A
A
A
A
A
A
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T A = +25°C
T A = +70°C
Steady state
t<5s
T A = +25°C
T A = +70°C
Steady state
t<5s
P D
R θ JA
P D
R θ JA
R θ JC
T J, T STG
0.7
0.42
180
76
2.1
1.3
58
25
10.2
-55 to +150
W
°C/W
W
°C/W
°C
Electrical Characteristics (@T A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T J = +25°C
Gate-Source Leakage
BV DSS
I DSS
I GSS
-40
—
—
—
—
—
—
1
±100
V
μA
nA
V GS = 0V, I D = 250 μ A
V DS = -40V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
-1.0
—
—
—
—
26
36
5.2
0.75
-2.2
33
50
—
1.2
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = -10V, I D = -4.4A
V GS = -4.5V, I D = -3.7A
V DS = -15V, I D = -4.4A
V GS = 0V, I S = -3.9A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = -4.5V)
Total Gate Charge (V GS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
t rr
Q rr
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1382
103
81
7.7
11.2
23.2
3.3
3.9
18.4
28.2
38.8
28.6
15.4
5.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
?
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
V DS = -20V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V DS = -20V, I D = -4.9A
V DS = -20V, I D = -3.9A
V GS = 4.5V, R G = 1 ?
I F = -3.9A, di/dt = 100A/ μ s
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing
DMP4047LFDE
D atasheet number: DS35777 Rev. 5 - 2
2 of 6
www.diodes.com
July 2012
? Diodes Incorporated
相关PDF资料 |
PDF描述 |
|---|---|
| DMP4050SSD-13 | MOSFET 2P-CH 40V 4A SO8 |
| DMP4050SSS-13 | MOSFET P-CH 40V 4.4A SO8 |
| DMP4051LK3-13 | MOSFET P-CH 40V 7.2A DPAK |
| DMP57D5UFB-7 | MOSFET P-CH 50V 200MA 3-DFN |
| DMP58D0LFB-7B | MOSFET P-CH 50V 180MA 3-DFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DMP4047SSD-13 | 制造商:Diodes Incorporated 功能描述:MOSFET BVDSS: 31V-40V SO-8 T&R 2.5K - Tape and Reel 制造商:Diodes Incorporated 功能描述:MOSFET P-CH 40V 5.1A 8-SOIC |
| DMP4050SSD | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMP4050SSD-13 | 功能描述:MOSFET MOSFET,P-CHANNEL -40V, -4.1A,-5.2A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| DMP4050SSS | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:40V P-CHANNEL ENHANCEMENT MODE MOSFET |
| DMP4050SSS-13 | 功能描述:MOSFET MOSFET,P-CHANNEL -40V, -4.7A,-6.0A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。