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| 型号： | DMS3019SSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 30V 7A/5.7A SO8 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A，5.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 15 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 2.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 42nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1932pF @ 15V |
| 功率 - 最大： | 1.19W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 其它名称： | DMS3019SSD-13DIDKR |
DMS3019SSD
Maximum Ratings – Q1 @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±12
Unit
V
V
Continuous Drain Current (Note 4) V GS = 10V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 5) V GS = 4.5V
Steady
State
Steady
State
Steady
State
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
7.0
5.6
9.0
7.0
8.0
6.5
A
A
A
Pulsed Drain Current (Note 6)
Avalanche Current (Notes 6 & 7)
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.3mH
I DM
I AR
E AR
40
13
25.4
A
A
mJ
Maximum Ratings – Q2 @TA = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Symbol
V DSS
V GSS
Value
30
±20
Unit
V
V
Continuous Drain Current (Note 4) V GS = 10V
Continuous Drain Current (Note 5) V GS = 10V
Continuous Drain Current (Note 5) V GS = 4.5V
Steady
State
Steady
State
Steady
State
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
T A = 25°C
T A = 70°C
I D
I D
I D
5.7
4.6
7.0
5.6
6.0
4.7
A
A
A
Pulsed Drain Current (Note 6)
Avalanche Current (Notes 6 & 7)
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.1mH
I D
I AR
E AR
40
16
12.8
A
A
mJ
Thermal Characteristics
Characteristic
Power Dissipation (Note 4)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 4)
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @T A = 25°C (Note 5)
Operating and Storage Temperature Range
Symbol
P D
R θ JA
P D
R θ JA
T J , T STG
Value
1.19
107
1.79
70
-55 to +150
Unit
W
°C/W
W
°C/W
°C
Notes:
4. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. The value in any given application depends on the user’s specific
board design. Device contains two active die running at equal power.
5. Device mounted on 1 inch x 1 inch FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Device contains two active die running
at equal power.
6. Repetitive rating, pulse width limited by junction temperature.
7. I AR and E AR rating are based on low frequency and duty cycles to keep T J = 25°C
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
2 of 10
www.diodes.com
October 2010
? Diodes Incorporated
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