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| 型号： | DMS3019SSD-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 6/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 30V 7A/5.7A SO8 |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7A，5.7A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 15 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 2.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 42nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1932pF @ 15V |
| 功率 - 最大： | 1.19W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 标准包装 |
| 其它名称： | DMS3019SSD-13DIDKR |
DMS3019SSD
Electrical Characteristics – Q2 @ T A = 25°C unless otherwise stated
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
BV DSS
I DSS
I GSS
30
-
-
-
-
-
-
1.0
±100
V
μ A
nA
V GS = 0V, I D = 250 μ A
V DS = 30V, V GS = 0V
V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
V GS(th)
R DS (ON)
|Y fs |
V SD
1.0
-
-
-
-
15
25
2.5
0.65
2.4
23
33
-
1.0
V
m Ω
S
V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 10A
V GS = 4.5V, I D = 7.5A
V DS = 5V, I D = 10A
V GS = 0V, I S = 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V GS = 4.5V)
Total Gate Charge (V GS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
C iss
C oss
C rss
R g
Q g
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
-
-
-
0.4
-
-
-
-
-
-
-
-
478.9
96.7
61.4
1.1
5.0
10.5
1.8
1.6
2.9
7.9
14.6
3.1
-
-
-
1.6
-
-
-
-
-
-
-
-
pF
Ω
nC
ns
V DS = 15V, V GS = 0V,
f = 1.0MHz
V DS = 0V, V GS = 0V, f = 1MHz
V DS = 15V, V GS = 4.5V, I D = 10A
V DS = 15V, V GS = 10V, I D = 10A
V GS = 10V, V DS = 15V,
R G = 3 ? , R L = 1.5 ?
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
30
V GS = 10V
20
25
V GS = 4.5V
15
V DS = 5V
20
V GS = 4.0V
15
V GS = 3.5V
10
V GS = 150°C
10
5
V GS = 125°C
V GS = 85°C
5
0
V GS = 2.5V
V GS = 3.0V
0
V GS = 25°C
V GS = -55°C
0
0.5
1
1.5 2 2.5 3 3.5 4 4.5
5
0
0.5 1 1.5 2 2.5 3 3.5
4
V DS , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Output Characteristic
V GS , GATE-SOURCE VOLTAGE (V)
Fig. 13 Typical Transfer Characteristic
DMS3019SSD
Document number: DS35053 Rev. 2 - 2
6 of 10
www.diodes.com
October 2010
? Diodes Incorporated
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