- 您现在的位置：买卖IC网 > Datasheet目录321 > DS1200 (Maxim Integrated)IC SRAM 1KBIT 4MHZ 10DIP Datasheet资料下载
参数资料
| 型号： | DS1200 |
| 厂商： | Maxim Integrated |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 1KBIT 4MHZ 10DIP |
| 标准包装： | 1 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM |
| 存储容量： | 1K（1K x 1） |
| 速度： | 4MHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 10-DIP（0.300"，7.62mm） |
| 供应商设备封装： | 10-PDIP |
| 包装： | 管件 |
DS1200
AC ELECTRICAL CHARACTERISTICS
(0oC to +70oC; V CC = 5V ± 10%)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Data to CLK Setup
Data to CLK Hold
Data to CLK Delay
CLK Low Time
CLK High Time
t DC
tCDH
t CDD
t CL
t CH
35
40
125
125
125
ns
ns
ns
ns
ns
3, 9
3, 9
3, 4, 6, 9
3, 9
3, 9
CLK Frequency
CLK Rise and Fall
f CLK
t R , t F
DC
4.0
500
MHz
ns
3, 9
9
RST
to Clock Setup
t CC
1
μs
3, 9
CLK to RST Hold
t CCH
40
ns
3, 9
RST
RST
Inactive Time
to I/O High-Z
t CWH
t CDZ
125
50
ns
ns
3, 9, 14
3, 9
NOTES:
1) All voltages and resistances are referenced to ground.
2) Input levels apply to CLK, DQ, and RST while V CC is not connected to the tag, then RST input
reverts to V IHE .
3) Measured at V IH = 2.0 or V IL = 0.8V and 10ns maximum rise and fall time.
4) Measured at V OH = 2.4V and V OL = 0.4V.
5) For CLK, DQ, RST , and V CC at 5V.
6) Load capacitance = 50pF.
7) Applies to RST when V CC < 3.8V.
8) Measured with outputs open.
9) Measured at VIH of RST greater than or equal to 3.8V when RST supplies power.
10) Logic 1 maximum is V CC + 0.3V if the V CC pin supplies power and RST +0.3V if the RST pin
supplies power.
11) RST logic 1 maximum is V CC + 0.3V if the V CC pin supplies power and 5.5V maximum if RST
supplies power.
12) Each DS1200 is marked with a four-digit date code AABB. AA designates the year of manufacture.
BB designates the week of manufacture. The expected t DR is defined as starting at the date of
manufacture.
13) Average AC RST current can be determined using the following formula:
I TOTAL = 2 + I LOAD DC + (4 x 10 -3 )(CL + 140)f
I TOTAL and I LOAD are in mA; CL is in pF; f is in MHz.
Applying the above formula, a load capacitance of 50pF running at a frequency of 4.0MHz gives an
I TOTAL current of 5mA.
14) When RST is supplying power, t CWH must be increased to 100ms.
7 of 7
相关PDF资料 |
PDF描述 |
|---|---|
| DS1220AB-100IND+ | IC NVSRAM 16KBIT 100NS 24DIP |
| DS1220Y-100IND+ | IC NVSRAM 16KBIT 100NS 24DIP |
| DS1225AB-70+ | IC NVSRAM 64KBIT 70NS 28DIP |
| DS1225Y-200+ | IC NVSRAM 64KBIT 200NS 28DIP |
| DS1230WP-150+ | IC NVSRAM 256KBIT 150NS 34PCM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS-1200 | 制造商:UNITEQ CORPORAT 功能描述:200MHz 2-Channel USB Digital Storage Oscilloscope 制造商:UNITEQ CORPORAT 功能描述:SCOPE,200MHz,2 CHANNEL,COLOR, 1GS/s,DIGITAL,USB,RS232C,1MB |
| DS1200_09 | 制造商:EMERSON-NETWORKPOWER 制造商全称:Emerson Network Power 功能描述:1200 Watts Distributed Power System |
| DS1-20-0001 | 功能描述:固定电感器 DS Storage choke 0.63A RoHS:否 制造商:AVX 电感:10 uH 容差:20 % 最大直流电流:1 A 最大直流电阻:0.075 Ohms 工作温度范围:- 40 C to + 85 C 自谐振频率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接类型:SMD/SMT 封装 / 箱体:6.6 mm x 4.45 mm |
| DS1-20-0002 | 功能描述:固定电感器 DS Storage choke 1.4A RoHS:否 制造商:AVX 电感:10 uH 容差:20 % 最大直流电流:1 A 最大直流电阻:0.075 Ohms 工作温度范围:- 40 C to + 85 C 自谐振频率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接类型:SMD/SMT 封装 / 箱体:6.6 mm x 4.45 mm |
| DS1-20-0003 | 功能描述:固定电感器 DS Storage choke 3.15A RoHS:否 制造商:AVX 电感:10 uH 容差:20 % 最大直流电流:1 A 最大直流电阻:0.075 Ohms 工作温度范围:- 40 C to + 85 C 自谐振频率:38 MHz Q 最小值:40 尺寸:4.45 mm W x 6.6 mm L x 2.92 mm H 屏蔽:Shielded 端接类型:SMD/SMT 封装 / 箱体:6.6 mm x 4.45 mm |
发布紧急采购，3分钟左右您将得到回复。