- 您现在的位置：买卖IC网 > Datasheet目录321 > DS1220Y-100IND+ (Maxim Integrated)IC NVSRAM 16KBIT 100NS 24DIP Datasheet资料下载
参数资料
| 型号： | DS1220Y-100IND+ |
| 厂商： | Maxim Integrated |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 16KBIT 100NS 24DIP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 14 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 16K (2K x 8) |
| 速度： | 100ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 24-DIP 模块（0.600"，15.24mm） |
| 供应商设备封装： | 24-EDIP |
| 包装： | 管件 |
19-5579; Rev 10/10
NOT RECOMMENDED FOR NEW DESIGNS
DS1220Y
16k Nonvolatile SRAM
www.maxim-ic.com
FEATURES
PIN ASSIGNMENT
?
10 years minimum data retention in the
?
?
?
?
?
?
?
absence of external power
Data is automatically protected during power
loss
Directly replaces 2k x 8 volatile static RAM
or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 24-pin DIP package
Read and write access times of 100 ns
Full ±10% operating range
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
VCC
A8
A9
WE
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
?
Optional industrial temperature range of
-40°C to +85°C, designated IND
24-Pin ENCAPSULATED PACKAGE
720-mil EXTENDED
PIN DESCRIPTION
A0-A10
- Address Inputs
DQ0-DQ7
- Data In/Data Out
- Chip Enable
CE
- Write Enable
W E
- Output Enable
OE
V CC
- Power (+5V)
GND
- Ground
DESCRIPTION
The DS1220Y 16k Nonvolatile SRAM is a 16,384-bit, fully static, nonvolatile RAM organized as 2048
words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that
constantly monitor V CC for an out-of-tolerance condition. When such a condition occurs, the lithium
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. The NV SRAM can be used in place of existing 2k x 8 SRAMs directly conforming to
the popular bytewide 24-pin DIP standard. The DS1220Y also matches the pinout of the 2716 EPROM or
the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the
number of write cycles that can be executed and no additional support circuitry is required for
microprocessor interfacing.
1 of 9
相关PDF资料 |
PDF描述 |
|---|---|
| DS1225AB-70+ | IC NVSRAM 64KBIT 70NS 28DIP |
| DS1225Y-200+ | IC NVSRAM 64KBIT 200NS 28DIP |
| DS1230WP-150+ | IC NVSRAM 256KBIT 150NS 34PCM |
| DS1230YP-100+ | IC NVSRAM 256KBIT 100NS 34PCM |
| DS1245AB-120IND+ | IC SRAM NV 128KX8 5.25V 32-DIP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1220Y-100IND+ | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220Y-120 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220Y-120+ | 制造商:Maxim Integrated Products 功能描述:RAM NV 16K-120NS LEAD FREE - Rail/Tube |
| DS1220Y-120-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1220Y-150 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。