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| 型号： | DS1220Y-100IND+ |
| 厂商： | Maxim Integrated |
| 文件页数： | 6/9页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 16KBIT 100NS 24DIP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 14 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 16K (2K x 8) |
| 速度： | 100ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 24-DIP 模块（0.600"，15.24mm） |
| 供应商设备封装： | 24-EDIP |
| 包装： | 管件 |
NOT RECOMMENDED FOR NEW DESIGNS
POWER-DOWN/POWER-UP CONDITION
SEE NOTE 11
POWER-DOWN/POWER-UP TIMING
DS1220Y
PARAMETER
CE at V IH before Power-Down
SYMBOL
t PD
MIN
0
MAX
UNITS
μ s
NOTES
11
V CC Slew from V TP to 0V
V CC Slew from 0V to V TP
CE at V IH after Power-Up
t F
t R
t REC
100
0
2
μ s
μ s
ms
(T A = +25 ° C)
PARAMETER
Expected Data Retention Time
SYMBOL
t DR
MIN
10
MAX
UNITS
years
NOTES
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1. WE is high for a read cycle.
2. OE = V IH or V IL . If OE = V IH during a write cycle, the output buffers remain in a high impedance
state.
3. t WP is specified as the logical AND of CE and WE . t WP is measured from the latter of CE or WE
going low to the earlier of CE or WE going high.
4. t DS are measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6 of 9
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1220Y-100IND+ | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220Y-120 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220Y-120+ | 制造商:Maxim Integrated Products 功能描述:RAM NV 16K-120NS LEAD FREE - Rail/Tube |
| DS1220Y-120-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1220Y-150 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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