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参数资料
| 型号： | DS1230AB-85 |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | Static RAM |
| 英文描述： | 32K X 8 NON-VOLATILE SRAM MODULE, 85 ns, PDIP28 |
| 封装： | DIP-28 |
| 文件页数： | 6/12页 |
| 文件大小： | 213K |
| 代理商： | DS1230AB-85 |
DS1230Y/AB
3 of 12
PACKAGES
The DS1230 devices are available in two packages: 28-pin DIP and 34-pin PowerCap Module (PCM).
The 28-pin DIP integrates a lithium battery, an SRAM memory and a nonvolatile control function into a
single package with a JEDEC-standard, 600-mil DIP pinout. The 34-pin PowerCap Module integrates
SRAM memory and nonvolatile control along with contacts for connection to the lithium battery in the
DS9034PC PowerCap. The PowerCap Module package design allows a DS1230 PCM device to be
surface mounted without subjecting its lithium backup battery to destructive high-temperature reflow
soldering. After a DS1230 PCM is reflow soldered, a DS9034PC PowerCap is snapped on top of the
PCM to form a complete Nonvolatile SRAM module. The DS9034PC is keyed to prevent improper
attachment. DS1230 PowerCap Modules and DS9034PC PowerCaps are ordered separately and shipped
in separate containers. See the DS9034PC data sheet for further information.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.3V to +7.0V
Operating Temperature
0°C to 70°C, -40°C to +85°C for IND parts
Storage Temperature
-40°C to +70°C, -40°C to +85°C for IND parts
Soldering Temperature
260°C for 10 seconds
*
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(tA: See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
DS1230AB Power Supply Voltage
VCC
4.75
5.0
5.25
V
DS1230Y Power Supply Voltage
VCC
4.5
5.0
5.5
V
Logic 1
VIH
2.2
VCC
V
Logic 0
VIL
0.0
0.8
V
DC ELECTRICAL
(VCC=5V
±=5% for DS1230AB)
CHARACTERISTICS
(tA: See Note 10) (VCC=5V
±=10% for DS1230Y)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Leakage Current
IIL
-1.0
+1.0
A
I/O Leakage Current CE
≥ V
IH
≤ V
CC
IIO
-1.0
+1.0
A
Output Current @ 2.4V
IOH
-1.0
mA
Output Current @ 0.4V
IOL
2.0
mA
Standby Current CE =2.2V
ICCS1
5.0
10.0
mA
Standby Current CE =VCC-0.5V
ICCS2
3.0
5.0
mA
Operating Current
ICCO1
85
mA
Write Protection Voltage (DS1230AB)
VTP
4.50
4.62
4.75
V
Write Protection Voltage (DS1230Y)
VTP
4.25
4.37
4.5
V
相关PDF资料 |
PDF描述 |
|---|---|
| DS1230AB-70 | 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP28 |
| DS1230YP-100 | 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34 |
| DS1230Y-150 | 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP28 |
| DS1230W-150 | 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DIP28 |
| DS1230WP-150 | 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA34 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1230AB-85+ | 功能描述:NVRAM 256k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1230AB-85IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM |
| DS1230AB-85-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM |
| DS1230ABL-100 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1230ABL-100-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
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