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参数资料
| 型号： | DS1249Y-70 |
| 厂商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分类： | Static RAM |
| 英文描述： | 256K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA32 |
| 封装： | 0.740 INCH, DIP-32 |
| 文件页数： | 1/10页 |
| 文件大小： | 286K |
| 代理商： | DS1249Y-70 |
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FEATURES
§ 10 years minimum data retention in the
absence of external power
§ Data is automatically protected during power
loss
§ Unlimited write cycles
§ Low-power CMOS operation
§ Read and write access times as fast as 70 ns
§ Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
§ Full ± 10% VCC operating range (DS1249Y)
§ Optional ± 5% VCC operating range
(DS1249AB)
§ Optional industrial temperature range of
-40
°C to +85°C, designated IND
§ JEDEC standard 32-pin DIP package
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A17
- Address Inputs
DQ0 - DQ7
- Data In/Data Out
CE
- Chip Enable
WE
- Write Enable
OE
- Output Enable
VCC
- Power (+5V)
GND
- Ground
NC
- No Connect
DESCRIPTION
The DS1249 2048k Nonvolatile SRAMs are 2,097,152-bit, fully static, nonvolatile SRAMs organized as
262,144 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry
which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the
lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. There is no limit on the number of write cycles which can be executed and no
additional support circuitry is required for microprocessor interfacing.
DS1249Y/AB
2048k Nonvolatile SRAM
www.maxim-ic.com
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1
2
3
4
5
6
7
8
9
10
11
12
14
31
32-Pin ENCAPSULATED PACKAGE
740-mil EXTENDED
A14
A7
A5
A4
A3
A2
A1
A0
DQ1
DQ0
VCC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ5
DQ6
32
30
29
28
27
26
25
24
23
22
21
19
20
A16
A12
A6
NC
DQ2
GND
15
16
18
17
DQ4
DQ3
相关PDF资料 |
PDF描述 |
|---|---|
| DS1249Y-100 | 256K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA32 |
| DS1250W | 512K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA32 |
| DS1250Y | 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA32 |
| DS1250AB | 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA32 |
| DS1258AB-70 | 128K X 16 NON-VOLATILE SRAM MODULE, 70 ns, DMA40 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1249Y-70# | 功能描述:NVRAM 2048K NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1249Y-70IND | 功能描述:NVRAM 2048K NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1249Y-70-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1249Y-70IND# | 功能描述:NVRAM 2048K NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1249Y-85 | 功能描述:NVRAM 2048K NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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