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参数资料
| 型号： | DS1251Y |
| 厂商： | Maxim Integrated Products, Inc. |
| 英文描述： | 4096K NV SRAM with Phantom Clock(带幻影时钟的4096K NV 静态RAM) |
| 中文描述： | 4096K非易失SRAM与幻影时钟（带幻影时钟的4096K非易失静态RAM）的 |
| 文件页数： | 11/12页 |
| 文件大小： | 90K |
| 代理商： | DS1251Y |
DS1251Y
022798 11/12
NOTES:
1. WE is high for a read cycle.
2. OE = V
IH
or V
IL
. If OE = V
IH
during write cycle, the output buffers remain in a high impedance state.
3. t
WP
is specified as the logical AND of CE and WE. t
WP
is measured from the latter of CE or WE going low to the
earlier of CE or WE going high.
4. t
DH
, t
DS
are measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 50 pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or later than the WE low transition in Write Cycle 1, the output
buffers remain in a high impedance state during this period.
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output buffers remain
in a high impedance state during this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers
remain in a high impedance state during this period.
9. The expected t
DR
is defined as cumulative time in the absence of V
CC
with the clock oscillator running.
10.t
WR
is a function of the latter occurring edge of WE or CE.
11. t
DH
and t
DS
are a function of the first occurring edge of WE or CE.
12.RST (Pin1) has an internal pull–up resistor.
13.Real–Time Clock Modules can be successfully processed through conventional wave–soldering techniques as
long as temperature exposure to the lithium energy source contained within does not exceed +85
°
C. Post solder
cleaning with water washing techniques is acceptable, provided that ultrasonic vibration is not used.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1251Y-120 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:4096K NV SRAM with Phantom Clock |
| DS1251Y-150 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述: |
| DS1251Y-70 | 功能描述:实时时钟 4096K NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1251Y-70+ | 功能描述:实时时钟 4096K NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1251YP | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:4096k NV SRAM with Phantom Clock |
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