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参数资料
| 型号： | DS1251Y |
| 厂商： | Maxim Integrated Products, Inc. |
| 英文描述： | 4096K NV SRAM with Phantom Clock(带幻影时钟的4096K NV 静态RAM) |
| 中文描述： | 4096K非易失SRAM与幻影时钟（带幻影时钟的4096K非易失静态RAM）的 |
| 文件页数： | 2/12页 |
| 文件大小： | 90K |
| 代理商： | DS1251Y |
DS1251Y
022798 2/12
RAM READ MODE
The DS1251Y executes a read cycle whenever WE
(Write Enable) is inactive (high) and CE (Chip Enable) is
active (low). The unique address specified by the 17 ad-
dress inputs (A0–A18) defines which of the 512K bytes
of data is to be accessed. Valid data will be available to
the eight data output drivers within t
ACC
(Access Time)
after the last address input signal is stable, providing
that CE and OE (Output Enable) access times and
states are also satisfied. If OE and CE access times are
not satisfied, then data access must be measured from
the later occurring signal (CE or OE) and the limiting pa-
rameter is either t
CO
for CE or t
OE
for OE rather than ad-
dress access.
RAM WRITE MODE
The DS1251Y is in the write mode whenever the WE
and CE signals are in the active (low) state after address
inputs are stable. The latter occurring falling edge of CE
or WE will determine the start of the write cycle. The
write cycle is terminated by the earlier rising edge of CE
or WE. All address inputs must be kept valid throughout
the write cycle. WE must return to the high state for a
minimum recovery time (t
WR
) before another cycle can
be initiated. The OE control signal should be kept inac-
tive (high) during write cycles to avoid bus contention.
However, if the output bus has been enabled (CE and
OE active) then WE will disable the outputs in t
ODW
from
its falling edge.
DATA RETENTION MODE
The DS1251Y provides full functional capability for V
CC
greater than V
TP
and write protects by 4.25. Data is
maintained in the absence of V
CC
without any additional
support circuitry. The nonvolatile static RAM constantly
monitors V
CC
. Should the supply voltage decay, the
RAM automatically write protects itself. All inputs to the
RAM become “don’t care” and all outputs are high im-
pedance. As V
CC
falls below approximately 3.0 volts,
the power switching circuit connects the lithium energy
source to RAM to retain data. During power–up, when
V
CC
rises above approximately 3.0 volts, the power
switching circuit connects external V
CC
to the RAM and
disconnects the lithium energy source. Normal RAM
operation can resume after V
CC
exceeds 4.5 volts.
FRESHNESS SEAL
Each DS1251Y is shipped from Dallas Semiconductor
with its lithium energy source disconnected, insuring full
energy capacity. When V
CC
is first applied at a level
greater than V
TP
, the lithium energy source is enabled
for battery backup operation.
PHANTOM CLOCK OPERATION
Communication with the Phantom Clock is established
by pattern recognition on a serial bit stream of 64 bits
which must be matched by executing 64 consecutive
write cycles containing the proper data on DQ0. All ac-
cesses which occur prior to recognition of the 64–bit pat-
tern are directed to memory.
After recognition is established, the next 64 read or write
cycles either extract or update data in the Phantom
Clock, and memory access is inhibited.
Data transfer to and from the timekeeping function is ac-
complished with a serial bit stream under control of Chip
Enable (CE), Output Enable (OE), and Write Enable
(WE). Initially, a read cycle to any memory location us-
ing the CE and OE control of the Phantom Clock starts
the pattern recognition sequence by moving a pointer to
the first bit of the 64–bit comparison register. Next, 64
consecutive write cycles are executed using the CE and
WE control of the SmartWatch. These 64 write cycles
are used only to gain access to the Phantom Clock.
Therefore, any address to the memory in the socket is
acceptable. However, the write cycles generated to
gain access to the Phantom Clock are also writing data
to a location in the mated RAM. The preferred way to
manage this requirement is to set aside just one ad-
dress location in RAM as a Phantom Clock scratch pad.
When the first write cycle is executed, it is compared to
bit 0 of the 64–bit comparison register. If a match is
found, the pointer increments to the next location of the
comparison register and awaits the next write cycle. If a
match is not found, the pointer does not advance and all
subsequent write cycles are ignored. If a read cycle oc-
curs at any time during pattern recognition, the present
sequence is aborted and the comparison register point-
er is reset. Pattern recognition continues for a total of 64
write cycles as described above until all the bits in the
comparison register have been matched (this bit pattern
is shown in Figure 1). With a correct match for 64–bits,
the Phantom Clock is enabled and data transfer to or
from the timekeeping registers can proceed. The next
64 cycles will cause the Phantom Clock to either receive
or transmit data on DQ0, depending on the level of the
OE pin or the WE pin. Cycles to other locations outside
the memory block can be interleaved with CE cycles
without interrupting the pattern recognition sequence or
data transfer sequence to the Phantom Clock.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1251Y-120 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:4096K NV SRAM with Phantom Clock |
| DS1251Y-150 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述: |
| DS1251Y-70 | 功能描述:实时时钟 4096K NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1251Y-70+ | 功能描述:实时时钟 4096K NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1251YP | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:4096k NV SRAM with Phantom Clock |
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