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参数资料
| 型号： | DS1258Y |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | DRAM |
| 英文描述： | 128K x 16 Nonvolatile SRAM(128K x 16 非易失性静态RAM) |
| 中文描述： | 128K X 16 NON-VOLATILE SRAM MODULE, 70 ns, PDIP40 |
| 文件页数： | 1/9页 |
| 文件大小： | 73K |
| 代理商： | DS1258Y |
DS1258Y/AB
128K x 16 Nonvolatile SRAM
DS1258Y/AB
022598 1/9
FEATURES
10 year minimum data retention in the absence of
external power
Data is automatically protected during a power loss
Separate upper byte and lower byte chip select inputs
Unlimited write cycles
Low–power CMOS
Read and write access times as fast as 70 ns
Lithium energy source is electrically disconnected to
retain freshness until power is applied for the first time
Full
±
10% operating range (DS1258Y)
Optional
±
5% operating range (DS1258AB)
PIN ASSIGNMENT
40–PIN ENCAPSULATED PACKAGE
740 MIL EXTENDED
OE
CEU
CEL
DQ15
DQ14
DQ13
DQ12
WE
A16
A15
A14
A13
A12
A11
A10
A9
GND
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
DQ11
DQ10
DQ9
DQ8
GND
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
A8
A7
A6
A5
A4
A3
A2
A1
A0
PIN DESCRIPTION
A0–A16
DQ0–DQ15
CEU
CEL
WE
OE
V
CC
GND
– Address Inputs
– Data In/Data Out
– Chip Enable Upper Byte
– Chip Enable Lower Byte
– Write Enable
– Output Enable
– Power Supply (+5V)
– Ground
DESCRIPTION
The DS1258 128K x 16 Nonvolatile SRAMs are
2,097,152–bit fully static, nonvolatile SRAMs, orga-
nized as 131,072 words by 16 bits. Each NV SRAM has
a self contained lithium energy source and control cir-
cuitry which constantly monitors V
CC
for an out–of–tol-
erance condition. When such a condition occurs, the
lithium energy source is automatically switched on and
write protection is unconditionally enabled to prevent
data corruption. DIP–package DS1258 devices can be
used in place of solutions which build nonvolatile 128K x
16 memory by utilizing a variety of discrete components.
There is no limit on the number of write cycles that can
be executed and no additional support circuitry is
required for microprocessor interfacing.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1258W | 3.3V 128K x 16 Nonvolatile SRAM(3.3V 128K x 16 非易失性静态RAM) |
| DS1259 | Battery Manager Chip(电池管理芯片) |
| DS1260 | Smart Battery(智能电池) |
| DS1265AB | 8M Nonvolatile SRAM(8M非易失性静态RAM) |
| DS1265Y | 8M Nonvolatile SRAM(8M非易失性静态RAM) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1258Y/AB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128K x 16 Nonvolatile SRAM |
| DS1258Y-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258Y-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258Y-100-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:128k x 16 Nonvolatile SRAM |
| DS1258Y-70 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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