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参数资料
| 型号： | DS1258Y |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | DRAM |
| 英文描述： | 128K x 16 Nonvolatile SRAM(128K x 16 非易失性静态RAM) |
| 中文描述： | 128K X 16 NON-VOLATILE SRAM MODULE, 70 ns, PDIP40 |
| 文件页数： | 3/9页 |
| 文件大小： | 73K |
| 代理商： | DS1258Y |
DS1258Y/AB
022598 3/9
DATA RETENTION MODE
The DS1258AB provides full functional capability for
V
CC
greater than 4.75 volts, and write protects by 4.5
volts. The DS1258Y provides full functional capability
for V
CC
greater than 4.5 volts and write protects by 4.25
volts. Data is maintained in the absence of V
CC
without
any additional support circuitry. The nonvolatile static
RAMs constantly monitor V
CC
. Should the supply volt-
age decay, the NV SRAMs automatically write protect
themselves, all inputs become “don’t care,” and all out-
puts become high impedance. As V
CC
falls below ap-
proximately 3.0 volts, a power switching circuit con-
nects the lithium energy source to RAM to retain data.
During power–up, when V
CC
rises above approximately
3.0 volts, the power switching circuit connects external
V
CC
to RAM and disconnects the lithium energy source.
Normal RAM operation can resume after V
CC
exceeds
4.75 volts for the DS1258AB and 4.5 volts for the
DS1258Y.
FRESHNESS SEAL
The DS1258 devices are shipped from Dallas Semicon-
ductor with the lithium energy sources disconnected,
guaranteeing full energy capacity. When V
CC
is first
applied at a level greater than V
TP
, the lithium energy
source is enabled for battery backup operation.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1258W | 3.3V 128K x 16 Nonvolatile SRAM(3.3V 128K x 16 非易失性静态RAM) |
| DS1259 | Battery Manager Chip(电池管理芯片) |
| DS1260 | Smart Battery(智能电池) |
| DS1265AB | 8M Nonvolatile SRAM(8M非易失性静态RAM) |
| DS1265Y | 8M Nonvolatile SRAM(8M非易失性静态RAM) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1258Y/AB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:128K x 16 Nonvolatile SRAM |
| DS1258Y-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258Y-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258Y-100-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:128k x 16 Nonvolatile SRAM |
| DS1258Y-70 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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