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参数资料
| 型号： | DS1265AB-70IND |
| 厂商： | Maxim Integrated |
| 文件页数： | 6/8页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 8MBIT 70NS 36DIP |
| 标准包装： | 9 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 8M（1M x 8） |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 4.75 V ~ 5.25 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 36-DIP 模块（0.600"，15.24mm） |
| 供应商设备封装： | 36-EDIP |
| 包装： | 管件 |
DS1265Y/AB
POWER-DOWN/POWER-UP CONDITION
SEE NOTE 11
POWER-DOWN/POWER-UP TIMING
(T A : See Note 10)
PARAMETER
V CC Fail Detect to CE and WE Inactive
SYMBOL
t PD
MIN
TYP
MAX
1.5
UNITS
μ s
NOTES
11
V CC slew from V TP to 0V
V CC slew from 0V to V TP
V CC Valid to CE and WE Inactive
V CC Valid to End of Write Protection
t F
t R
t PU
t REC
150
150
2
125
μ s
μ s
ms
ms
(T A = +25 ° C)
PARAMETER
Expected Data Retention Time
SYMBOL
t DR
MIN
10
TYP
MAX
UNITS
years
NOTES
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1. WE is high for a Read Cycle.
2. OE = V IH or V IL . If OE = V IH during write cycle, the output buffers remain in a high-impedance state.
3. t WP is specified as the logical AND of CE or WE . t WP is measured from the latter of CE or WE going
low to the earlier of CE or WE going high.
4. t DS is measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or latter than the WE low transition, the output
buffers remain in a high-impedance state during this period.
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in high-impedance state during this period.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1265AB-70-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1265AB-70IND+ | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1265W | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 8Mb Nonvolatile SRAM |
| DS1265W-100 | 功能描述:NVRAM 3.3V 8M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1265W-100+ | 功能描述:NVRAM 3.3V 8M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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