参数资料
型号: DS1308U-33+T
厂商: Maxim Integrated Products
文件页数: 16/16页
文件大小: 0K
描述: IC RTC 56BYTE NVRAM I2C 8UMAX
标准包装: 3,000
类型: 时钟/日历
特点: 闰年,NVSRAM,方波输出
存储容量: 56B
时间格式: HH:MM:SS(12/24 小时)
数据格式: YY-MM-DD-dd
接口: I²C,2 线串口
电源电压: 3 V ~ 5.5 V
电压 - 电源,电池: 1.3 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 8-TSSOP,8-MSOP(0.118",3.00mm 宽)
供应商设备封装: 8-uMAX
包装: 带卷 (TR)
DS1308
Low-Current I2C RTC with 56-Byte NV RAM
9
Maxim Integrated
Freshness Seal Mode
When a battery is first attached to the device, the device
does not immediately provide battery-backup power to
the RTC or internal circuitry. After VCC exceeds VPF,
the devices leave the freshness seal mode and provide
battery-backup power whenever VCC subsequently falls
below VBAT. This mode allows attachment of the battery
during product manufacturing, but no battery capacity is
consumed until after the system has been activated for
the first time. As a result, minimum battery energy is used
during storage and shipping.
Oscillator Circuit
The DS1308 uses an external 6pF 32.768kHz crystal. The
oscillator circuit does not require any external resistors or
capacitors to operate. See Table 2 for the external crystal
parameters. The Functional Diagram shows a simplified
schematic of the oscillator circuit. The startup time is
usually less than 1 second when using a crystal with the
specified characteristics.
Whenever VCC > VPF, a 5Fs glitch filter at the output of
the crystal oscillator is enabled.
Clock Accuracy
The accuracy of the clock is dependent upon the
accuracy of the crystal and the accuracy of the match
between the capacitive load of the oscillator circuit and
the capacitive load for which the crystal was trimmed.
Crystal frequency drift caused by temperature shifts
creates additional error. External circuit noise coupled
into the oscillator circuit can result in the clock running
fast. Figure 3 shows a typical PCB layout for isolating
the crystal and oscillator from noise. Refer to Application
Note 58: Crystal Considerations with Maxim Real-Time
Clocks (RTCs) for detailed information.
Table 1. Power Control
Table 2. Crystal Specifications
Note: The crystal, traces, and crystal input pins should be isolated from RF generat-
Clocks (RTCs) for additional specifications.
Figure 3. Typical PCB Layout for Crystal
SUPPLY CONDITION
READ/WRITE
ACCESS
POWERED
BY
VCC < VPF, VCC < VBAT
No
VBAT
VCC < VPF, VCC > VBAT
No
VCC
VCC > VPF, VCC < VBAT
Yes
VCC
VCC > VPF, VCC > VBAT
Yes
VCC
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Nominal Frequency
fO
32.768
kHz
Series Resistance
ESR
100
kI
Load Capacitance
CL
6
pF
CRYSTAL
X1
X2
GND
LOCAL GROUND PLANE (LAYER 2)
NOTE: AVOID ROUTING SIGNALS IN THE CROSSHATCHED AREA (UPPER LEFT-HAND
QUADRANT) OF THE PACKAGE UNLESS THERE IS A GROUND PLANE BETWEEN THE
SIGNAL LINE AND THE PACKAGE.
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