- 您现在的位置：买卖IC网 > PDF目录381719 > DS1350Y (DALLAS SEMICONDUCTOR) 4096K Nonvolatile SRAM with Battery Monitor(带电池监控的4096K非易失性SRAM) PDF资料下载
参数资料
| 型号： | DS1350Y |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | DRAM |
| 英文描述： | 4096K Nonvolatile SRAM with Battery Monitor(带电池监控的4096K非易失性SRAM) |
| 中文描述： | 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
| 文件页数： | 1/11页 |
| 文件大小： | 114K |
| 代理商： | DS1350Y |
DS1350Y/AB
4096K Nonvolatile SRAM
with Battery Monitor
DS1350Y/AB
042398 1/11
FEATURES
10 years minimum data retention in the absence of
external power
Data is automatically protected during power loss
Power supply monitor resets processor when V
CC
power loss occurs and holds processor in reset during
V
CC
ramp–up
Battery monitor checks remaining capacity daily
Read and write access times as fast as 70 ns
Unlimited write cycle endurance
Typical standby current 50
μ
A
Upgrade for 512K x 8 SRAM, EEPROM or Flash
Lithium battery is electrically disconnected to retain
freshness until power is applied for the first time
Full
±
10% V
CC
operating range (DS1350Y) or
optional
±
5% V
CC
operating range (DS1350AB)
Optional industrial temperature range of –40
°
C to
+85
°
C, designated IND
New PowerCap Module (PCM) package
– Directly surface–mountable module
– Replaceable snap–on PowerCap provides lith-
ium backup battery
– Standardized pinout for all nonvolatile SRAM
products
– Detachment feature on PowerCap allows easy
removal using a regular screwdriver
PIN ASSIGNMENT
BW
A15
A16
OE
CE
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
WE
RST
V
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
A18
A17
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
34(USES DS9034PC POWERCAP)
GND
V
BAT
PIN DESCRIPTION
A0–A18
DQ0–DQ7
CE
WE
OE
RST
BW
V
CC
GND
NC
– Address Inputs
– Data In/Data Out
– Chip Enable
– Write Enable
– Output Enable
– Reset Output
– Battery Warning Output
– Power (+5 Volts)
– Ground
– No Connect
DESCRIPTION
The DS1350 4096K Nonvolatile SRAMs are
4,194,304–bit, fully static, nonvolatile SRAMs orga-
nized as 524,288 words by eight bits. Each NV SRAM
has a self–contained lithium energy source and control
circuitry which constantly monitors V
CC
for an out–of–
tolerance condition. When such a condition occurs, the
lithium energy source is automatically switched on and
write protection is unconditionally enabled to prevent
data corruption. Additionally, the DS1350 devices have
dedicated circuitry for monitoring the status of V
CC
and
the status of the internal lithium battery. DS1350
devices in the PowerCap Module package are directly
surface mountable and are normally paired with a
DS9034PC PowerCap to form a complete Nonvolatile
SRAM module. The devices can be used in place of
512K x 8 SRAM, EEPROM or Flash components.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1350W | 3.3V 4096K Nonvolatile SRAM with Battery Monitor(带电池监控的3.3V 4096K非易失性SRAM) |
| DS1371 | 2-Wire, 32-Bit Binary Counter Watchdog Clock |
| DS1371U | 2-Wire, 32-Bit Binary Counter Watchdog Clock |
| DS1372 | I2C, 32-Bit, Binary Counter Clock with 64-Bit ID |
| DS1374U-3 | I2C, 32-Bit Binary Counter Watchdog RTC with Trickle Charger and Reset Input/Output |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1350Y/AB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:4096k Nonvolatile SRAM with Battery Monitor |
| DS1350Y-70 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:4096k Nonvolatile SRAM with Battery Monitor |
| DS1350YL-100 | 功能描述:IC NVSRAM 4MBIT 100NS 34LPM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| DS1350YL-100-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1350YL-70 | 功能描述:IC NVSRAM 4MBIT 70NS 34LPM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
发布紧急采购，3分钟左右您将得到回复。