参数资料
型号: DS1610
厂商: DALLAS SEMICONDUCTOR
元件分类: 微控制器/微处理器
英文描述: Partitioned NV Controller(分割式非易失性控制器)
中文描述: SPECIALTY MICROPROCESSOR CIRCUIT, PDIP16
封装: 0.300 INCH, DIP-16
文件页数: 5/10页
文件大小: 85K
代理商: DS1610
DS1610
022598 5/10
DC ELECTRICAL CHARACTERISTICS
(0
°
C to 70
°
C; V
CCI
<V
BAT
)
UNITS
PARAMETER
SYMBOL
MIN
TYP
MAX
NOTES
CEO Output
V
OHL
V
BAT
-0.2
V
WEO Output
V
OHL
V
BAT
-0.2
V
V
BAT1
or V
BAT2
Battery Current
I
BAT
100
nA
2, 3
Battery Backup Current @ V
CCO
= V
BAT
-0.2V
I
CCO2
150
μ
A
6, 7, 8
CAPACITANCE
(t
A
= 25
°
C)
NOTES
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Input Capacitance
C
IN
5
pF
Output Capacitance
C
OUT
7
pF
(0
°
C to 70
°
C; V
CCI
=4.75V to 5.50V, TOL=GND
V
CCI
=4.50V to 5.50V, TOL–V
CCO
)
TYP
MAX
AC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
MIN
UNITS
NOTES
Address Setup
t
AS
0
ns
9
Address Hold
t
AH
50
ns
9
Read Recovery
t
RR
10
ns
9
CEI, WEI Pulse Width
t
CW
75
ns
9
CEI to CEO Falling Propagation
Delay
t
PDF
5
ns
10
Later of CEI, WEI to WEO Falling
Propagation Delay
t
PDF
20
ns
10, 11
CEI to CEO Rising Propagation
Delay
t
PDR
5
ns
10
Earlier of CEI, WEI to WEO Ris-
ing Propagation Delay
t
PDR
5
ns
10, 11
Write Recovery
t
WR
10
ns
9, 11
AC ELECTRICAL CHARACTERISTICS
(0
°
C to 70
°
C; V
CC
<4.5V)
UNITS
PARAMETER
SYMBOL
MIN
TYP
MAX
NOTES
Recovery at Power Up
t
REC
25
125
ms
12
V
CC
Slew Rate Power Down
t
F
300
μ
s
V
CC
Slew Rate Power Down
t
FB
10
μ
s
V
CC
Slew Rate Power Up
t
F
0
μ
s
13
CEO Pulse Width
t
WP
, t
CE
1.5
μ
s
7, 8
WEO Pulse Width
t
WP
, t
CE
1.5
μ
s
7, 8
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